III-V layer transfer onto silicon and applications

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 4, 2005, Pages 509-515

  Di Cioccio, L ^a   Jalaguier, E ^a   Letertre, F ^b  

^a CEA LETI   (France)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING TECHNOLOGIES; INTEGRATION DENSITY; MICROELECTRONICS MANUFACTURING; THREADING DISLOCATIONS;

DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; INDIUM COMPOUNDS; MICROELECTRONICS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM ARSENIDE;

SILICON;

EID: 25444463014     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200460411     Document Type: Conference Paper

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