메뉴 건너뛰기




Volumn , Issue , 2011, Pages 247-295

Strain engineering of silicon-germanium (SiGe) micro- and nanostructures

Author keywords

Ge islands; Self organization; Semiconductor nanostructures; SiGe alloys; Strain engineering

Indexed keywords

FIELD EFFECT TRANSISTORS; GERMANIUM; NANOSTRUCTURES; SILICON ALLOYS;

EID: 84903034915     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1533/9780857091420.2.247     Document Type: Chapter
Times cited : (2)

References (242)
  • 1
    • 0000720702 scopus 로고
    • Surface ripples, Crosshatch pattern, and dislocation formation - cooperating mechanisms in lattice mismatch relaxation
    • Albrecht M., Christiansen S., Michler J., Dorsch W., Strunk H.P., Hansson P.O., Bauser E. Surface ripples, Crosshatch pattern, and dislocation formation - cooperating mechanisms in lattice mismatch relaxation. Applied Physics Letters 1995, 67(9):1232-1234.
    • (1995) Applied Physics Letters , vol.67 , Issue.9 , pp. 1232-1234
    • Albrecht, M.1    Christiansen, S.2    Michler, J.3    Dorsch, W.4    Strunk, H.P.5    Hansson, P.O.6    Bauser, E.7
  • 2
    • 34447290233 scopus 로고    scopus 로고
    • Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure
    • Ang K.W., Tung C.H., Balasubramanian N., Samudra G.S., Yeo Y.C. Strained n-channel transistors with silicon source and drain regions and embedded silicon/germanium as strain-transfer structure. IEEE Electron Device Letters 2007, 28(7):609-612.
    • (2007) IEEE Electron Device Letters , vol.28 , Issue.7 , pp. 609-612
    • Ang, K.W.1    Tung, C.H.2    Balasubramanian, N.3    Samudra, G.S.4    Yeo, Y.C.5
  • 3
    • 40949121075 scopus 로고    scopus 로고
    • Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance
    • Ang K.W., Lin J., Tung C.H., Balasubramanian N., Samudra G.S., Yeo Y.C. Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance. IEEE Transactions on Electron Devices 2008, 55(3):850-857.
    • (2008) IEEE Transactions on Electron Devices , vol.55 , Issue.3 , pp. 850-857
    • Ang, K.W.1    Lin, J.2    Tung, C.H.3    Balasubramanian, N.4    Samudra, G.S.5    Yeo, Y.C.6
  • 4
    • 34249061541 scopus 로고    scopus 로고
    • Electronic measurement and control of spin transport in silicon
    • Appelbaum I., Huang B.Q., Monsma D.J. Electronic measurement and control of spin transport in silicon. Nature 2007, 447(7142):295-298.
    • (2007) Nature , vol.447 , Issue.7142 , pp. 295-298
    • Appelbaum, I.1    Huang, B.Q.2    Monsma, D.J.3
  • 5
    • 51249188112 scopus 로고
    • Interface morphology development during stress-corrosion cracking. 1. Via surface diffusion
    • Asaro R.J., Tiller W.A. Interface morphology development during stress-corrosion cracking. 1. Via surface diffusion. Metallurgical Transactions 1972, 3(7):1789-1796.
    • (1972) Metallurgical Transactions , vol.3 , Issue.7 , pp. 1789-1796
    • Asaro, R.J.1    Tiller, W.A.2
  • 8
    • 33751510722 scopus 로고    scopus 로고
    • Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis
    • Bauer G., Schäffler F. Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis. Physica Status Solidi A - Applications and Materials Science 2006, 203(14):3496-3505.
    • (2006) Physica Status Solidi A - Applications and Materials Science , vol.203 , Issue.14 , pp. 3496-3505
    • Bauer, G.1    Schäffler, F.2
  • 13
    • 0037095512 scopus 로고    scopus 로고
    • Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures
    • Biasiol G., Gustafsson A., Leifer K., Kapon E. Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures. Physical Review B 2002, 65(20):205306.
    • (2002) Physical Review B , vol.65 , Issue.20 , pp. 205306
    • Biasiol, G.1    Gustafsson, A.2    Leifer, K.3    Kapon, E.4
  • 14
    • 33645397634 scopus 로고    scopus 로고
    • Aspects of thin-film superlattice thermoelectric materials, devices, and applications
    • Böttner H., Chen G., Venkatasubramanian R. Aspects of thin-film superlattice thermoelectric materials, devices, and applications. MRS Bulletin 2006, 31(3):211-217.
    • (2006) MRS Bulletin , vol.31 , Issue.3 , pp. 211-217
    • Böttner, H.1    Chen, G.2    Venkatasubramanian, R.3
  • 16
    • 0032516193 scopus 로고    scopus 로고
    • Spontaneous formation of ordered structures in thin films of metals supported on an elastomeric polymer
    • Bowden N., Brittain S., Evans A.G., Hutchinson J.W., Whitesides G.M. Spontaneous formation of ordered structures in thin films of metals supported on an elastomeric polymer. Nature 1998, 393(6681):146-149.
    • (1998) Nature , vol.393 , Issue.6681 , pp. 146-149
    • Bowden, N.1    Brittain, S.2    Evans, A.G.3    Hutchinson, J.W.4    Whitesides, G.M.5
  • 19
    • 0023648591 scopus 로고
    • Band-gap engineering - from physics and materials to new semiconductor-devices
    • Capasso F. Band-gap engineering - from physics and materials to new semiconductor-devices. Science 1987, 235(4785):172-176.
    • (1987) Science , vol.235 , Issue.4785 , pp. 172-176
    • Capasso, F.1
  • 23
    • 45149113064 scopus 로고    scopus 로고
    • Controlled fabrication of Cr/Si and Cr/SiGe tubes tethered to insulator substrates
    • Cavallo F., Sigle W., Schmidt O.G. Controlled fabrication of Cr/Si and Cr/SiGe tubes tethered to insulator substrates. Journal of Applied Physics 2008, 103(11):116103.
    • (2008) Journal of Applied Physics , vol.103 , Issue.11 , pp. 116103
    • Cavallo, F.1    Sigle, W.2    Schmidt, O.G.3
  • 24
    • 53649101070 scopus 로고    scopus 로고
    • Fabrication and electrical characterization of Si-based rolled-up microtubes
    • Cavallo F., Songmuang R., Schmidt O.G. Fabrication and electrical characterization of Si-based rolled-up microtubes. Applied Physics Letters 2008, 93(14):143113.
    • (2008) Applied Physics Letters , vol.93 , Issue.14 , pp. 143113
    • Cavallo, F.1    Songmuang, R.2    Schmidt, O.G.3
  • 25
    • 62349140771 scopus 로고    scopus 로고
    • Bending and wrinkling as competing relaxation pathways for strained free-hanging films
    • Cendula P., Kiravittaya S., Mei Y.F., Deneke C., Schmidt O.G. Bending and wrinkling as competing relaxation pathways for strained free-hanging films. Physical Review B 2009, 79(8):085429.
    • (2009) Physical Review B , vol.79 , Issue.8 , pp. 085429
    • Cendula, P.1    Kiravittaya, S.2    Mei, Y.F.3    Deneke, C.4    Schmidt, O.G.5
  • 26
    • 0037057660 scopus 로고    scopus 로고
    • Thin films - Wrinkling of an elastic sheet under tension
    • Cerda E., Ravi-Chandar K., Mahadevan L. Thin films - Wrinkling of an elastic sheet under tension. Nature 2002, 419(6907):579-580.
    • (2002) Nature , vol.419 , Issue.6907 , pp. 579-580
    • Cerda, E.1    Ravi-Chandar, K.2    Mahadevan, L.3
  • 28
    • 33745737669 scopus 로고    scopus 로고
    • Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template
    • Chen G., Lichtenberger H., Bauer G., Jantsch W., Schäffler F. Initial stage of the two-dimensional to three-dimensional transition of a strained SiGe layer on a pit-patterned Si(001) template. Physical Review B 2006, 74(3):035302.
    • (2006) Physical Review B , vol.74 , Issue.3 , pp. 035302
    • Chen, G.1    Lichtenberger, H.2    Bauer, G.3    Jantsch, W.4    Schäffler, F.5
  • 30
    • 65449151892 scopus 로고    scopus 로고
    • The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography
    • Chen P.X., Fan Y.L., Zhong Z.Y. The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography. Nanotechnology 2009, 20(9):095303.
    • (2009) Nanotechnology , vol.20 , Issue.9 , pp. 095303
    • Chen, P.X.1    Fan, Y.L.2    Zhong, Z.Y.3
  • 31
    • 12844284695 scopus 로고    scopus 로고
    • Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs/GaAs(001) and Ge/Si(001)
    • Costantini G., Rastelli A., Manzano C., Songmuang R., Schmidt O.G., Kern K., von Känel H. Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs/GaAs(001) and Ge/Si(001). Applied Physics Letters 2004, 85(23):5673-5675.
    • (2004) Applied Physics Letters , vol.85 , Issue.23 , pp. 5673-5675
    • Costantini, G.1    Rastelli, A.2    Manzano, C.3    Songmuang, R.4    Schmidt, O.G.5    Kern, K.6    von Känel, H.7
  • 32
    • 0040746259 scopus 로고
    • Epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques
    • Cullis A.G., Booker G.R. Epitaxial growth of silicon and germanium films on (111) silicon surfaces using UHV sublimation and evaporation techniques. Journal of Crystal Growth 1971, 9(1):132-138.
    • (1971) Journal of Crystal Growth , vol.9 , Issue.1 , pp. 132-138
    • Cullis, A.G.1    Booker, G.R.2
  • 34
    • 42149162291 scopus 로고    scopus 로고
    • Impact of template variations on shape and arrangement of Si/Ge quantum dot arrays
    • Dais C., Solak H.H., Müller E., Grützmacher D. Impact of template variations on shape and arrangement of Si/Ge quantum dot arrays. Applied Physics Letters 2008, 92(14):143102.
    • (2008) Applied Physics Letters , vol.92 , Issue.14 , pp. 143102
    • Dais, C.1    Solak, H.H.2    Müller, E.3    Grützmacher, D.4
  • 35
    • 67650055797 scopus 로고    scopus 로고
    • Photoluminescence studies of SiGe quantum dot arrays prepared by templated self-assembly
    • Dais C., Mussler G., Sigg H., Fromherz T., Auzelyte V., Solak H.H., Grützmacher D. Photoluminescence studies of SiGe quantum dot arrays prepared by templated self-assembly. EPL 2008, 84(6):67017.
    • (2008) EPL , vol.84 , Issue.6 , pp. 67017
    • Dais, C.1    Mussler, G.2    Sigg, H.3    Fromherz, T.4    Auzelyte, V.5    Solak, H.H.6    Grützmacher, D.7
  • 38
    • 20744454786 scopus 로고    scopus 로고
    • Existence of shallow facets at the base of strained epitaxial islands
    • Daruka I., Tersoff J. Existence of shallow facets at the base of strained epitaxial islands. Physical Review B 2002, 66(13):132104.
    • (2002) Physical Review B , vol.66 , Issue.13 , pp. 132104
    • Daruka, I.1    Tersoff, J.2
  • 39
    • 0000901045 scopus 로고    scopus 로고
    • Shape transition in growth of strained islands
    • Daruka I., Tersoff J., Barabasi A.L. Shape transition in growth of strained islands. Physical Review Letters 1999, 82(13):2753-2756.
    • (1999) Physical Review Letters , vol.82 , Issue.13 , pp. 2753-2756
    • Daruka, I.1    Tersoff, J.2    Barabasi, A.L.3
  • 42
    • 8344236819 scopus 로고    scopus 로고
    • Real-time formation, accurate positioning, and fluid filling of single rolled-up nanotubes
    • Deneke C., Schmidt O.G. Real-time formation, accurate positioning, and fluid filling of single rolled-up nanotubes. Applied Physics Letters 2004, 85(14):2914-2916.
    • (2004) Applied Physics Letters , vol.85 , Issue.14 , pp. 2914-2916
    • Deneke, C.1    Schmidt, O.G.2
  • 47
    • 0035806185 scopus 로고    scopus 로고
    • Trench formation around and between self-assembled Ge islands on Si
    • Denker U., Schmidt O.G., Jin-Philipp N.Y., Eberl K. Trench formation around and between self-assembled Ge islands on Si. Applied Physics Letters 2001, 78(23):3723-3725.
    • (2001) Applied Physics Letters , vol.78 , Issue.23 , pp. 3723-3725
    • Denker, U.1    Schmidt, O.G.2    Jin-Philipp, N.Y.3    Eberl, K.4
  • 48
    • 0041917676 scopus 로고    scopus 로고
    • Quantitative evaluation of stress-field attenuation in stacks of self-assembled Ge islands
    • Denker U., Stoffel M., Schmidt O.G. Quantitative evaluation of stress-field attenuation in stacks of self-assembled Ge islands. Applied Physics Letters 2003, 83(7):1432-1434.
    • (2003) Applied Physics Letters , vol.83 , Issue.7 , pp. 1432-1434
    • Denker, U.1    Stoffel, M.2    Schmidt, O.G.3
  • 50
    • 0031552836 scopus 로고    scopus 로고
    • Diffusional narrowing of Ge on Si(100) coherent island quantum dot size distributions
    • Drucker J., Chaparro S. Diffusional narrowing of Ge on Si(100) coherent island quantum dot size distributions. Applied Physics Letters 1997, 71(5):614-616.
    • (1997) Applied Physics Letters , vol.71 , Issue.5 , pp. 614-616
    • Drucker, J.1    Chaparro, S.2
  • 51
    • 3643130905 scopus 로고
    • Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
    • Eaglesham D.J., Cerullo M. Dislocation-free Stranski-Krastanow growth of Ge on Si(100). Physical Review Letters 1990, 64(16):1943-1946.
    • (1990) Physical Review Letters , vol.64 , Issue.16 , pp. 1943-1946
    • Eaglesham, D.J.1    Cerullo, M.2
  • 53
    • 44649195076 scopus 로고    scopus 로고
    • A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe
    • Ezzahri Y., Zeng G., Fukutani K., Bian Z., Shakouri A. A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe. Microelectronics Journal 2008, 39(7):981-991.
    • (2008) Microelectronics Journal , vol.39 , Issue.7 , pp. 981-991
    • Ezzahri, Y.1    Zeng, G.2    Fukutani, K.3    Bian, Z.4    Shakouri, A.5
  • 54
    • 45249121753 scopus 로고    scopus 로고
    • Schrodinger equation for a particle on a curved surface in an electric and magnetic field
    • Ferrari G., Cuoghi G. Schrodinger equation for a particle on a curved surface in an electric and magnetic field. Physical Review Letters 2008, 100(23):230403.
    • (2008) Physical Review Letters , vol.100 , Issue.23 , pp. 230403
    • Ferrari, G.1    Cuoghi, G.2
  • 57
    • 65249138847 scopus 로고    scopus 로고
    • Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder
    • Friedland K.J., Siddiki A., Hey R., Kostial H., Riedel A., Maude D.K. Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder. Physical Review B 2009, 79(12):125320.
    • (2009) Physical Review B , vol.79 , Issue.12 , pp. 125320
    • Friedland, K.J.1    Siddiki, A.2    Hey, R.3    Kostial, H.4    Riedel, A.5    Maude, D.K.6
  • 61
  • 62
    • 0000208096 scopus 로고    scopus 로고
    • Competing growth mechanisms of Ge/Si(001) coherent clusters
    • Goldfarb I., Hayden P.T., Owen J.H.G., Briggs G.A.D. Competing growth mechanisms of Ge/Si(001) coherent clusters. Physical Review B 1997, 56(16):10459-10468.
    • (1997) Physical Review B , vol.56 , Issue.16 , pp. 10459-10468
    • Goldfarb, I.1    Hayden, P.T.2    Owen, J.H.G.3    Briggs, G.A.D.4
  • 64
    • 0001104366 scopus 로고
    • 2-Dimensional islanding atop stressed solid helium and epitaxial-films
    • Grinfeld M. 2-Dimensional islanding atop stressed solid helium and epitaxial-films. Physical Review B 1994, 49(12):8310-8319.
    • (1994) Physical Review B , vol.49 , Issue.12 , pp. 8310-8319
    • Grinfeld, M.1
  • 65
    • 0142026428 scopus 로고    scopus 로고
    • Nanoscroll formation from strained layer heterostructures
    • Grundmann M. Nanoscroll formation from strained layer heterostructures. Applied Physics Letters 2003, 83(12):2444-2446.
    • (2003) Applied Physics Letters , vol.83 , Issue.12 , pp. 2444-2446
    • Grundmann, M.1
  • 67
    • 0030126448 scopus 로고    scopus 로고
    • In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth 1 Si(001)/Ge
    • Hammar M., LeGoues F.K., Tersoff J., Reuter M.C., Tromp R.M. In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth 1 Si(001)/Ge. Surface Science 1996, 349(2):129-144.
    • (1996) Surface Science , vol.349 , Issue.2 , pp. 129-144
    • Hammar, M.1    LeGoues, F.K.2    Tersoff, J.3    Reuter, M.C.4    Tromp, R.M.5
  • 68
    • 0037183949 scopus 로고    scopus 로고
    • Quantum dot superlattice thermoelectric materials and devices
    • Harman T.C., Taylor P.J., Walsh M.P., LaForge B.E. Quantum dot superlattice thermoelectric materials and devices. Science 2002, 297(5590):2229-2232.
    • (2002) Science , vol.297 , Issue.5590 , pp. 2229-2232
    • Harman, T.C.1    Taylor, P.J.2    Walsh, M.P.3    LaForge, B.E.4
  • 69
    • 0042059297 scopus 로고    scopus 로고
    • Silicon-based heterostructures: Strained-layer growth by molecular beam epitaxy
    • Herman M.A. Silicon-based heterostructures: Strained-layer growth by molecular beam epitaxy. Crystal Research and Technology 1999, 34(5-6):583-595.
    • (1999) Crystal Research and Technology , vol.34 , Issue.5-6 , pp. 583-595
    • Herman, M.A.1
  • 71
    • 0001173915 scopus 로고
    • Effect of quantum-well structures on the thermoelectric figure of merit
    • Hicks L.D., Dresselhaus M.S. Effect of quantum-well structures on the thermoelectric figure of merit. Physical Review B 1993, 47(19):12727-12731.
    • (1993) Physical Review B , vol.47 , Issue.19 , pp. 12727-12731
    • Hicks, L.D.1    Dresselhaus, M.S.2
  • 72
    • 35949006143 scopus 로고
    • Thermoelectric figure of merit of a one-dimensional conductor
    • Hicks L.D., Dresselhaus M.S. Thermoelectric figure of merit of a one-dimensional conductor. Physical Review B 1993, 47(24):16631-16634.
    • (1993) Physical Review B , vol.47 , Issue.24 , pp. 16631-16634
    • Hicks, L.D.1    Dresselhaus, M.S.2
  • 73
    • 36449001744 scopus 로고
    • Use of quantum-well superlattices to obtain a high figure of merit from nonconventional thermoelectric-materials
    • Hicks L.D., Harman T.C., Dresselhaus M.S. Use of quantum-well superlattices to obtain a high figure of merit from nonconventional thermoelectric-materials. Applied Physics Letters 1993, 63(23):3230-3232.
    • (1993) Applied Physics Letters , vol.63 , Issue.23 , pp. 3230-3232
    • Hicks, L.D.1    Harman, T.C.2    Dresselhaus, M.S.3
  • 75
    • 0032614165 scopus 로고    scopus 로고
    • Strain induced vertical and lateral correlations in quantum dot superlattices
    • Holý V., Springholz G., Pinczolits M., Bauer G. Strain induced vertical and lateral correlations in quantum dot superlattices. Physical Review Letters 1999, 83(2):356-359.
    • (1999) Physical Review Letters , vol.83 , Issue.2 , pp. 356-359
    • Holý, V.1    Springholz, G.2    Pinczolits, M.3    Bauer, G.4
  • 77
    • 0001579018 scopus 로고
    • Strain relief by microroughness in surfactant-mediated growth of Ge on Si(001)
    • Horn-von Hoegen M., Müllier B.H., Alfaiou A. Strain relief by microroughness in surfactant-mediated growth of Ge on Si(001). Physical Review B 1994, 50(16):11640-11652.
    • (1994) Physical Review B , vol.50 , Issue.16 , pp. 11640-11652
    • Horn-von Hoegen, M.1    Müllier, B.H.2    Alfaiou, A.3
  • 78
    • 14044274990 scopus 로고    scopus 로고
    • Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection
    • Horn-von Hoegen M., Müllier B.H., Grabosch T., Kury P. Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection. Physical Review B 2004, 70(23):235313.
    • (2004) Physical Review B , vol.70 , Issue.23 , pp. 235313
    • Horn-von Hoegen, M.1    Müllier, B.H.2    Grabosch, T.3    Kury, P.4
  • 82
    • 84858425945 scopus 로고    scopus 로고
    • Assembly and analysis of ordered semiconductor quantum dot arrays by focused ion beam nanofabrication and tomography
    • Hull R., Graham J.F., Kubis A.J., Portavoce A., Ross F.M. Assembly and analysis of ordered semiconductor quantum dot arrays by focused ion beam nanofabrication and tomography. Microscopy and Microanalysis 2007, 13:176-177.
    • (2007) Microscopy and Microanalysis , vol.13 , pp. 176-177
    • Hull, R.1    Graham, J.F.2    Kubis, A.J.3    Portavoce, A.4    Ross, F.M.5
  • 83
    • 0001632392 scopus 로고
    • High electron-mobility in modulation-doped Si/SiGe
    • Ismail K., Meyerson B.S., Wang P.J. High electron-mobility in modulation-doped Si/SiGe. Applied Physics Letters 1991, 58(19):2117-2119.
    • (1991) Applied Physics Letters , vol.58 , Issue.19 , pp. 2117-2119
    • Ismail, K.1    Meyerson, B.S.2    Wang, P.J.3
  • 84
    • 79953185927 scopus 로고
    • Epitaxial growth of Ge layers on si substrates by vacuum evaporation
    • Ito K., Takahashi K. Epitaxial growth of Ge layers on si substrates by vacuum evaporation. Japanese Journal of Applied Physics 1968, 7(8):821-826.
    • (1968) Japanese Journal of Applied Physics , vol.7 , Issue.8 , pp. 821-826
    • Ito, K.1    Takahashi, K.2
  • 86
    • 0000972470 scopus 로고    scopus 로고
    • Direct observation of subcritical fluctuations during the formation of strained semiconductor islands
    • Jesson D.E., Kästner M., Voigtländer B. Direct observation of subcritical fluctuations during the formation of strained semiconductor islands. Physical Review Letters 2000, 84(2):330-333.
    • (2000) Physical Review Letters , vol.84 , Issue.2 , pp. 330-333
    • Jesson, D.E.1    Kästner, M.2    Voigtländer, B.3
  • 87
    • 0142260540 scopus 로고    scopus 로고
    • Temperature effect on the formation of uniform self-assembled Ge dots
    • Jin G., Liu J.L., Wang K.L. Temperature effect on the formation of uniform self-assembled Ge dots. Applied Physics Letters 2003, 83(14):2847-2849.
    • (2003) Applied Physics Letters , vol.83 , Issue.14 , pp. 2847-2849
    • Jin, G.1    Liu, J.L.2    Wang, K.L.3
  • 88
    • 0031237188 scopus 로고    scopus 로고
    • Lithographic positioning of self-assembled Ge islands on Si(001)
    • Kamins T.I., Williams R.S. Lithographic positioning of self-assembled Ge islands on Si(001). Applied Physics Letters 1997, 71(9):1201-1203.
    • (1997) Applied Physics Letters , vol.71 , Issue.9 , pp. 1201-1203
    • Kamins, T.I.1    Williams, R.S.2
  • 89
    • 0037450220 scopus 로고    scopus 로고
    • Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning
    • Kammler M., Hull R., Reuter M.C., Ross F.M. Lateral control of self-assembled island nucleation by focused-ion-beam micropatterning. Applied Physics Letters 2003, 82(7):1093-1095.
    • (2003) Applied Physics Letters , vol.82 , Issue.7 , pp. 1093-1095
    • Kammler, M.1    Hull, R.2    Reuter, M.C.3    Ross, F.M.4
  • 90
    • 0032516155 scopus 로고    scopus 로고
    • A silicon-based nuclear spin quantum computer
    • Kane B.E. A silicon-based nuclear spin quantum computer. Nature 1998, 393(6681):133-137.
    • (1998) Nature , vol.393 , Issue.6681 , pp. 133-137
    • Kane, B.E.1
  • 91
    • 42749099338 scopus 로고    scopus 로고
    • Material distribution across the interface of random and ordered island arrays
    • Kar G.S., Kiravittaya S., Stoffel M., Schmidt O.G. Material distribution across the interface of random and ordered island arrays. Physical Review Letters 2004, 93(24):246103.
    • (2004) Physical Review Letters , vol.93 , Issue.24 , pp. 246103
    • Kar, G.S.1    Kiravittaya, S.2    Stoffel, M.3    Schmidt, O.G.4
  • 92
    • 0016569440 scopus 로고
    • One-dimensional SiGe superlattice grown by UHV epitaxy
    • Kasper E., Herzog H.J., Kibbel H. One-dimensional SiGe superlattice grown by UHV epitaxy. Applied Physics 1975, 8(3):199-205.
    • (1975) Applied Physics , vol.8 , Issue.3 , pp. 199-205
    • Kasper, E.1    Herzog, H.J.2    Kibbel, H.3
  • 93
    • 0037536527 scopus 로고    scopus 로고
    • Kinetically self-limiting growth of Ge islands on Si(001)
    • Kästner M., Voigtländer B. Kinetically self-limiting growth of Ge islands on Si(001). Physical Review Letters 1999, 82(13):2745-2748.
    • (1999) Physical Review Letters , vol.82 , Issue.13 , pp. 2745-2748
    • Kästner, M.1    Voigtländer, B.2
  • 96
    • 0001495376 scopus 로고    scopus 로고
    • Germanium 'quantum dots' embedded in silicon: Quantitative study of self-alignment and coarsening
    • Kienzle O., Ernst F., Ruhle M., Schmidt O.G., Eberl K. Germanium 'quantum dots' embedded in silicon: Quantitative study of self-alignment and coarsening. Applied Physics Letters 1999, 74(2):269-271.
    • (1999) Applied Physics Letters , vol.74 , Issue.2 , pp. 269-271
    • Kienzle, O.1    Ernst, F.2    Ruhle, M.3    Schmidt, O.G.4    Eberl, K.5
  • 97
    • 0032023480 scopus 로고    scopus 로고
    • Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties
    • Kim E.S., Usami N., Shiraki Y. Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties. Applied Physics Letters 1998, 72(13):1617-1619.
    • (1998) Applied Physics Letters , vol.72 , Issue.13 , pp. 1617-1619
    • Kim, E.S.1    Usami, N.2    Shiraki, Y.3
  • 98
    • 1842630066 scopus 로고    scopus 로고
    • Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers
    • Kim H.J., Zhao Z.M., Xie Y.H. Three-stage nucleation and growth of Ge self-assembled quantum dots grown on partially relaxed SiGe buffer layers. Physical Review B 2003, 68(20):205312.
    • (2003) Physical Review B , vol.68 , Issue.20 , pp. 205312
    • Kim, H.J.1    Zhao, Z.M.2    Xie, Y.H.3
  • 99
    • 33144473476 scopus 로고    scopus 로고
    • Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors
    • Kim W., Zide J., Gossard A., Klenov D., Stemmer S., Shakouri A., Majumdar A. Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors. Physical Review Letters 2006, 96(4):045901.
    • (2006) Physical Review Letters , vol.96 , Issue.4 , pp. 045901
    • Kim, W.1    Zide, J.2    Gossard, A.3    Klenov, D.4    Stemmer, S.5    Shakouri, A.6    Majumdar, A.7
  • 100
    • 28844476121 scopus 로고    scopus 로고
    • Self-assembled InAs quantum dots on patterned GaAs(OOl) substrates: Formation and shape evolution
    • Kiravittaya S., Rastelli A., Schmidt O.G. Self-assembled InAs quantum dots on patterned GaAs(OOl) substrates: Formation and shape evolution. Applied Physics Letters 2005, 87(24):243112.
    • (2005) Applied Physics Letters , vol.87 , Issue.24 , pp. 243112
    • Kiravittaya, S.1    Rastelli, A.2    Schmidt, O.G.3
  • 101
    • 65249164796 scopus 로고    scopus 로고
    • Lattice thermal conductivity of nanostructured thermoelectric materials based on PbTe
    • Koh Y.K., Vineis C.J., Calawa S.D., Walsh M.P., Cahill D.G. Lattice thermal conductivity of nanostructured thermoelectric materials based on PbTe. Applied Physics Letters 2009, 94:153101.
    • (2009) Applied Physics Letters , vol.94 , pp. 153101
    • Koh, Y.K.1    Vineis, C.J.2    Calawa, S.D.3    Walsh, M.P.4    Cahill, D.G.5
  • 102
    • 0026896874 scopus 로고
    • Layer-by-layer growth of germanium on Si(100) - Strain-induced morphology and the influence of surfactants
    • Köhler U., Jusko O., Müllier B., Horn-von Hoegen M., Pook M. Layer-by-layer growth of germanium on Si(100) - Strain-induced morphology and the influence of surfactants. Ultramicroscopy 1992, 42:832-837.
    • (1992) Ultramicroscopy , vol.42 , pp. 832-837
    • Köhler, U.1    Jusko, O.2    Müllier, B.3    Horn-von Hoegen, M.4    Pook, M.5
  • 103
    • 0000816737 scopus 로고    scopus 로고
    • Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography
    • Kohmoto S., Nakamura H., Ishikawa T., Asakawa K. Site-controlled self-organization of individual InAs quantum dots by scanning tunneling probe-assisted nanolithography. Applied Physics Letters 1999, 75(22):3488-3490.
    • (1999) Applied Physics Letters , vol.75 , Issue.22 , pp. 3488-3490
    • Kohmoto, S.1    Nakamura, H.2    Ishikawa, T.3    Asakawa, K.4
  • 104
    • 33845185775 scopus 로고    scopus 로고
    • Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping
    • Lang C., Kodambaka S., Ross F.M., Cockayne D.J.H. Real time observation of GeSi/Si(001) island shrinkage due to surface alloying during Si capping. Physical Review Letters 2006, 97(22):226104.
    • (2006) Physical Review Letters , vol.97 , Issue.22 , pp. 226104
    • Lang, C.1    Kodambaka, S.2    Ross, F.M.3    Cockayne, D.J.H.4
  • 106
    • 38949133073 scopus 로고    scopus 로고
    • Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices
    • Lee M.L., Venkatasubramanian R. Effect of nanodot areal density and period on thermal conductivity in SiGe/Si nanodot superlattices. Applied Physics Letters 2008, 92(5):053112.
    • (2008) Applied Physics Letters , vol.92 , Issue.5 , pp. 053112
    • Lee, M.L.1    Venkatasubramanian, R.2
  • 109
    • 53349101683 scopus 로고    scopus 로고
    • Strain induced semiconductor nanotubes: from formation process to device applications
    • Li X.L. Strain induced semiconductor nanotubes: from formation process to device applications. Journal of Physics D - Applied Physics 2008, 41(19):193001.
    • (2008) Journal of Physics D - Applied Physics , vol.41 , Issue.19 , pp. 193001
    • Li, X.L.1
  • 114
    • 51849158351 scopus 로고    scopus 로고
    • Wrinkled-up nanochannel networks: Long-range ordering, scalability, and X-ray investigation
    • Malachias A., Mei Y.F., Annabattula R.K., Deneke C., Onck P.R., Schmidt O.G. Wrinkled-up nanochannel networks: Long-range ordering, scalability, and X-ray investigation. ACS Nano 2008, 2(8):1715-1721.
    • (2008) ACS Nano , vol.2 , Issue.8 , pp. 1715-1721
    • Malachias, A.1    Mei, Y.F.2    Annabattula, R.K.3    Deneke, C.4    Onck, P.R.5    Schmidt, O.G.6
  • 115
    • 0000443190 scopus 로고
    • Elastic interactions of point-defects in a semi-infinite medium
    • Maradudin A.A., Wallis R.F. Elastic interactions of point-defects in a semi-infinite medium. Surface Science 1980, 91(2-3):423-439.
    • (1980) Surface Science , vol.91 , Issue.2-3 , pp. 423-439
    • Maradudin, A.A.1    Wallis, R.F.2
  • 116
    • 29744455067 scopus 로고    scopus 로고
    • Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures
    • Marchetti R., Montalenti F., Miglio L., Capellini G., De Seta M., Evangelisti F. Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures. Applied Physics Letters 2005, 87(26):261919.
    • (2005) Applied Physics Letters , vol.87 , Issue.26 , pp. 261919
    • Marchetti, R.1    Montalenti, F.2    Miglio, L.3    Capellini, G.4    De Seta, M.5    Evangelisti, F.6
  • 118
    • 0000577886 scopus 로고    scopus 로고
    • Mechanism of organization of three-dimensional islands in SiGe/Si multilayers
    • Mateeva E., Sutter P., Bean J.C., Lagally M.G. Mechanism of organization of three-dimensional islands in SiGe/Si multilayers. Applied Physics Letters 1997, 71(22):3233-3235.
    • (1997) Applied Physics Letters , vol.71 , Issue.22 , pp. 3233-3235
    • Mateeva, E.1    Sutter, P.2    Bean, J.C.3    Lagally, M.G.4
  • 119
    • 63349088600 scopus 로고    scopus 로고
    • Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (001) substrates with different stripe orientations
    • Matei D., Sanduijav B., Chen G., Hesser G., Springholz G. Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (001) substrates with different stripe orientations. Journal of Crystal Growth 2009, 311(7):2220-2223.
    • (2009) Journal of Crystal Growth , vol.311 , Issue.7 , pp. 2220-2223
    • Matei, D.1    Sanduijav, B.2    Chen, G.3    Hesser, G.4    Springholz, G.5
  • 120
    • 56849125514 scopus 로고    scopus 로고
    • Kinetically suppressed Ostwald ripening of Ge/Si(100) hut clusters
    • McKay M.R., Venables J.A., Drucker J. Kinetically suppressed Ostwald ripening of Ge/Si(100) hut clusters. Physical Review Letters 2008, 101(21):216104.
    • (2008) Physical Review Letters , vol.101 , Issue.21 , pp. 216104
    • McKay, M.R.1    Venables, J.A.2    Drucker, J.3
  • 121
    • 0000415158 scopus 로고    scopus 로고
    • Annealing of Ge nanocrystals on Si(001) at 550°C: Metastability of huts and the stability of pyramids and domes
    • Medeiros-Ribeiro G., Kamins T.I., Ohlberg D.A.A., Williams R.S. Annealing of Ge nanocrystals on Si(001) at 550°C: Metastability of huts and the stability of pyramids and domes. Physical Review B 1998, 58(7):3533-3536.
    • (1998) Physical Review B , vol.58 , Issue.7 , pp. 3533-3536
    • Medeiros-Ribeiro, G.1    Kamins, T.I.2    Ohlberg, D.A.A.3    Williams, R.S.4
  • 122
    • 0032535998 scopus 로고    scopus 로고
    • Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes
    • Medeiros-Ribeiro G., Bratkovski A.M., Kamins T.I., Ohlberg D.A.A., Williams R.S. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes. Science 1998, 279(5349):353-355.
    • (1998) Science , vol.279 , Issue.5349 , pp. 353-355
    • Medeiros-Ribeiro, G.1    Bratkovski, A.M.2    Kamins, T.I.3    Ohlberg, D.A.A.4    Williams, R.S.5
  • 123
    • 34548297897 scopus 로고    scopus 로고
    • Semiconductor sub-micro-/nanochannel networks by deterministic layer wrinkling
    • Mei Y.F., Thurmer D.J., Cavallo F., Kiravittaya S., Schmidt O.G. Semiconductor sub-micro-/nanochannel networks by deterministic layer wrinkling. Advanced Materials 2007, 19(16):2124-2128.
    • (2007) Advanced Materials , vol.19 , Issue.16 , pp. 2124-2128
    • Mei, Y.F.1    Thurmer, D.J.2    Cavallo, F.3    Kiravittaya, S.4    Schmidt, O.G.5
  • 129
    • 79955990553 scopus 로고    scopus 로고
    • Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers
    • Mizuno T., Sugiyama N., Tezuka T., Takagi S. Relaxed SiGe-on-insulator substrates without thick SiGe buffer layers. Applied Physics Letters 2002, 80(4):601-603.
    • (2002) Applied Physics Letters , vol.80 , Issue.4 , pp. 601-603
    • Mizuno, T.1    Sugiyama, N.2    Tezuka, T.3    Takagi, S.4
  • 133
    • 34548268224 scopus 로고    scopus 로고
    • Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
    • Myronov M., Sawano K., Shiraki Y., Mouri T., Itoh K.M. Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures. Applied Physics Letters 2007, 91(8):082108.
    • (2007) Applied Physics Letters , vol.91 , Issue.8 , pp. 082108
    • Myronov, M.1    Sawano, K.2    Shiraki, Y.3    Mouri, T.4    Itoh, K.M.5
  • 134
    • 0031140982 scopus 로고    scopus 로고
    • Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy
    • Nakata Y., Sugiyama Y., Futatsugi T., Yokoyama N. Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy. Journal of Crystal Growth 1997, 175:713-719.
    • (1997) Journal of Crystal Growth , vol.175 , pp. 713-719
    • Nakata, Y.1    Sugiyama, Y.2    Futatsugi, T.3    Yokoyama, N.4
  • 135
    • 0023291561 scopus 로고
    • Artificially structured thin-film materials and interfaces
    • Narayanamurti V. Artificially structured thin-film materials and interfaces. Science 1987, 235(4792):1023-1028.
    • (1987) Science , vol.235 , Issue.4792 , pp. 1023-1028
    • Narayanamurti, V.1
  • 136
    • 4344709607 scopus 로고    scopus 로고
    • Strain-mediated patterning of surface nanostructure by the subsurface island array
    • Ni Y., Soh A.K., He L.H. Strain-mediated patterning of surface nanostructure by the subsurface island array. Journal of Crystal Growth 2004, 269(2-4):262-269.
    • (2004) Journal of Crystal Growth , vol.269 , Issue.2-4 , pp. 262-269
    • Ni, Y.1    Soh, A.K.2    He, L.H.3
  • 137
    • 0242367132 scopus 로고    scopus 로고
    • Curvature estimation for multilayer hinged structures with initial strains
    • Nikishkov G.P. Curvature estimation for multilayer hinged structures with initial strains. Journal of Applied Physics 2003, 94(8):5333-5336.
    • (2003) Journal of Applied Physics , vol.94 , Issue.8 , pp. 5333-5336
    • Nikishkov, G.P.1
  • 138
    • 0028304096 scopus 로고
    • Self-organized growth of strained InGaAs Quantum disks
    • Nötzel R., Temmyo J., Tamamura T. Self-organized growth of strained InGaAs Quantum disks. Nature 1994, 369(6476):131-133.
    • (1994) Nature , vol.369 , Issue.6476 , pp. 131-133
    • Nötzel, R.1    Temmyo, J.2    Tamamura, T.3
  • 140
    • 5444275992 scopus 로고    scopus 로고
    • Si/SiGe heterostructures: from material and physics to devices and circuits
    • Paul D.J. Si/SiGe heterostructures: from material and physics to devices and circuits. Semiconductor Science and Technology 2004, 19(10):R75-R108.
    • (2004) Semiconductor Science and Technology , vol.19 , Issue.10
    • Paul, D.J.1
  • 144
    • 70349986624 scopus 로고    scopus 로고
    • Alloying and strain relaxation in SiGe islands grown on pit-patterned Si(001) substrates probed by nanotomography
    • Pezzoli F., Stoffel M., Merdzhanova T., Rastelli A., Schmidt O.G. Alloying and strain relaxation in SiGe islands grown on pit-patterned Si(001) substrates probed by nanotomography. Nanoscale Research Letters 2009, 4(9):1073-1077.
    • (2009) Nanoscale Research Letters , vol.4 , Issue.9 , pp. 1073-1077
    • Pezzoli, F.1    Stoffel, M.2    Merdzhanova, T.3    Rastelli, A.4    Schmidt, O.G.5
  • 145
    • 36849036276 scopus 로고    scopus 로고
    • Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation
    • Portavoce A., Hull R., Reuter M.C., Ross F.M. Nanometer-scale control of single quantum dot nucleation through focused ion-beam implantation. Physical Review B 2007, 76(23):235301.
    • (2007) Physical Review B , vol.76 , Issue.23 , pp. 235301
    • Portavoce, A.1    Hull, R.2    Reuter, M.C.3    Ross, F.M.4
  • 147
    • 0035673567 scopus 로고    scopus 로고
    • A new technique for fabricating three-dimensional micro- and nanostructures of various shapes
    • Prinz V.Y., Grützmacher D., Beyer A., David C., Ketterer B., Deckardt E. A new technique for fabricating three-dimensional micro- and nanostructures of various shapes. Nanotechnology 2001, 12(4):399-402.
    • (2001) Nanotechnology , vol.12 , Issue.4 , pp. 399-402
    • Prinz, V.Y.1    Grützmacher, D.2    Beyer, A.3    David, C.4    Ketterer, B.5    Deckardt, E.6
  • 148
    • 0037166842 scopus 로고    scopus 로고
    • Critical role of the surface reconstruction in the thermodynamic stability of 105 Ge pyramids on Si(001)
    • Raited P., Migas D.B., Miglio L., Rastelli A., von Känel H. Critical role of the surface reconstruction in the thermodynamic stability of 105 Ge pyramids on Si(001). Physical Review Letters 2002, 88(25):256103.
    • (2002) Physical Review Letters , vol.88 , Issue.25 , pp. 256103
    • Raited, P.1    Migas, D.B.2    Miglio, L.3    Rastelli, A.4    von Känel, H.5
  • 149
    • 0036716627 scopus 로고    scopus 로고
    • Surface evolution of faceted islands
    • Rastelli A., von Känel H. Surface evolution of faceted islands. Surface Science 2002, 515(2-3):L493-L498.
    • (2002) Surface Science , vol.515 , Issue.2-3
    • Rastelli, A.1    von Känel, H.2
  • 150
    • 45849155571 scopus 로고    scopus 로고
    • Reversible shape evolution of Ge islands on Si(001)
    • Rastelli A., Kummer M., von Känel H. Reversible shape evolution of Ge islands on Si(001). Physical Review Letters 2001, 87(25):256101.
    • (2001) Physical Review Letters , vol.87 , Issue.25 , pp. 256101
    • Rastelli, A.1    Kummer, M.2    von Känel, H.3
  • 151
    • 79955989928 scopus 로고    scopus 로고
    • Shape preservation of Ge/Si(001) islands during Si capping
    • Rastelli A., Müller E., von Känel H. Shape preservation of Ge/Si(001) islands during Si capping. Applied Physics Letters 2002, 80(8):1438-1440.
    • (2002) Applied Physics Letters , vol.80 , Issue.8 , pp. 1438-1440
    • Rastelli, A.1    Müller, E.2    von Känel, H.3
  • 152
  • 155
    • 69649102699 scopus 로고    scopus 로고
    • In situ X-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes
    • Richard M.I., Schülli T.U., Renaud G., Wintersberger E., Chen G., Bauer G., Holý V. In situ X-ray scattering study on the evolution of Ge island morphology and relaxation for low growth rate: Advanced transition to superdomes. Physical Review B 2009, 80(4):045313.
    • (2009) Physical Review B , vol.80 , Issue.4 , pp. 045313
    • Richard, M.I.1    Schülli, T.U.2    Renaud, G.3    Wintersberger, E.4    Chen, G.5    Bauer, G.6    Holý, V.7
  • 156
    • 0033521177 scopus 로고    scopus 로고
    • Transition states between pyramids and domes during Ge/Si island growth
    • Ross F.M., Tromp R.M., Reuter M.C. Transition states between pyramids and domes during Ge/Si island growth. Science 1999, 286(5446):1931-1934.
    • (1999) Science , vol.286 , Issue.5446 , pp. 1931-1934
    • Ross, F.M.1    Tromp, R.M.2    Reuter, M.C.3
  • 157
    • 0028086459 scopus 로고
    • Fabrication of atomic-scale structures on Si(001) surfaces
    • Sailing C.T., Lagally M.G. Fabrication of atomic-scale structures on Si(001) surfaces. Science 1994, 265(5171):502-506.
    • (1994) Science , vol.265 , Issue.5171 , pp. 502-506
    • Sailing, C.T.1    Lagally, M.G.2
  • 158
    • 70350706034 scopus 로고    scopus 로고
    • Shape transitions and island nucleation for Si/Ge molecular beam epitaxy on stripe-patterned Si (001) substrate
    • Sanduijav B., Matei D., Chen G., Springholz G. Shape transitions and island nucleation for Si/Ge molecular beam epitaxy on stripe-patterned Si (001) substrate. Physical Review B 2009, 80(12):125329.
    • (2009) Physical Review B , vol.80 , Issue.12 , pp. 125329
    • Sanduijav, B.1    Matei, D.2    Chen, G.3    Springholz, G.4
  • 160
    • 11944268588 scopus 로고
    • Mechanical stresses in (sub)monolayer epitaxial-films
    • Schell-Sorokin A.J., Tromp R.M. Mechanical stresses in (sub)monolayer epitaxial-films. Physical Review Letters 1990, 64(9):1039-1042.
    • (1990) Physical Review Letters , vol.64 , Issue.9 , pp. 1039-1042
    • Schell-Sorokin, A.J.1    Tromp, R.M.2
  • 163
    • 0035826219 scopus 로고    scopus 로고
    • Nanotechnology - Thin solid films roll up into nanotubes
    • Schmidt O.G., Eberl K. Nanotechnology - Thin solid films roll up into nanotubes. Nature 2001, 410(6825):168.
    • (2001) Nature , vol.410 , Issue.6825 , pp. 168
    • Schmidt, O.G.1    Eberl, K.2
  • 164
    • 0035367479 scopus 로고    scopus 로고
    • Self-assembled Ge/Si dots for faster field-effect transistors
    • Schmidt O.G., Eberl K. Self-assembled Ge/Si dots for faster field-effect transistors. IEEE Transactions on Electron Devices 2001, 48(6):1175-1179.
    • (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.6 , pp. 1175-1179
    • Schmidt, O.G.1    Eberl, K.2
  • 165
    • 0035926983 scopus 로고    scopus 로고
    • Free-standing SiGe-based nanopipelines on Si(001) substrates
    • Schmidt O.G., Jin-Phillipp N.Y. Free-standing SiGe-based nanopipelines on Si(001) substrates. Applied Physics Letters 2001, 78(21):3310-3312.
    • (2001) Applied Physics Letters , vol.78 , Issue.21 , pp. 3310-3312
    • Schmidt, O.G.1    Jin-Phillipp, N.Y.2
  • 166
    • 0001207460 scopus 로고    scopus 로고
    • Modified Stranski-Krastanov growth in stacked layers of self-assembled islands
    • Schmidt O.G., Kienzle O., Hao Y., Eberl K., Ernst F. Modified Stranski-Krastanov growth in stacked layers of self-assembled islands. Applied Physics Letters 1999, 74(9):1272-1274.
    • (1999) Applied Physics Letters , vol.74 , Issue.9 , pp. 1272-1274
    • Schmidt, O.G.1    Kienzle, O.2    Hao, Y.3    Eberl, K.4    Ernst, F.5
  • 167
    • 0001174136 scopus 로고    scopus 로고
    • Effect of overgrowth temperature on the photoluminescence of Ge/Si islands
    • Schmidt O.G., Denker U., Eberl K., Kienzle O., Ernst F. Effect of overgrowth temperature on the photoluminescence of Ge/Si islands. Applied Physics Letters 2000, 77(16):2509-2511.
    • (2000) Applied Physics Letters , vol.77 , Issue.16 , pp. 2509-2511
    • Schmidt, O.G.1    Denker, U.2    Eberl, K.3    Kienzle, O.4    Ernst, F.5
  • 169
    • 0034670731 scopus 로고    scopus 로고
    • Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands
    • Schmidt O.G., Eberl K., Rau Y. Strain and band-edge alignment in single and multiple layers of self-assembled Ge/Si and GeSi/Si islands. Physical Review B 2000, 62(24):16715-16720.
    • (2000) Physical Review B , vol.62 , Issue.24 , pp. 16715-16720
    • Schmidt, O.G.1    Eberl, K.2    Rau, Y.3
  • 178
    • 33947312728 scopus 로고    scopus 로고
    • Nanoscale thermal transport and microrefrigerators on a chip
    • Shakouri A. Nanoscale thermal transport and microrefrigerators on a chip. Proceedings of the IEEE 2006, 94(8):1613-1638.
    • (2006) Proceedings of the IEEE , vol.94 , Issue.8 , pp. 1613-1638
    • Shakouri, A.1
  • 180
    • 0033246392 scopus 로고    scopus 로고
    • Spontaneous ordering of nanostructures on crystal surfaces
    • Shchukin V.A., Bimberg D. Spontaneous ordering of nanostructures on crystal surfaces. Reviews of Modern Physics 1999, 71(4):1125-1171.
    • (1999) Reviews of Modern Physics , vol.71 , Issue.4 , pp. 1125-1171
    • Shchukin, V.A.1    Bimberg, D.2
  • 182
    • 34249896418 scopus 로고    scopus 로고
    • Semiconductor quantum light sources
    • Shields A.J. Semiconductor quantum light sources. Nature Photonics 2007, 1(4):215-223.
    • (2007) Nature Photonics , vol.1 , Issue.4 , pp. 215-223
    • Shields, A.J.1
  • 184
    • 0005580628 scopus 로고    scopus 로고
    • Vertically aligned and electronically coupled growth induced InAs islands in GaAs
    • Solomon G.S., Trezza J.A., Marshall A.F., Harris J.S. Vertically aligned and electronically coupled growth induced InAs islands in GaAs. Physical Review Letters 1996, 76(6):952-955.
    • (1996) Physical Review Letters , vol.76 , Issue.6 , pp. 952-955
    • Solomon, G.S.1    Trezza, J.A.2    Marshall, A.F.3    Harris, J.S.4
  • 185
    • 33751564660 scopus 로고    scopus 로고
    • Rolled-up micro- and nanotubes from single-material thin films
    • Songmuang R., Deneke C., Schmidt O.G. Rolled-up micro- and nanotubes from single-material thin films. Applied Physics Letters 2006, 89(22):223109.
    • (2006) Applied Physics Letters , vol.89 , Issue.22 , pp. 223109
    • Songmuang, R.1    Deneke, C.2    Schmidt, O.G.3
  • 188
    • 0024611337 scopus 로고
    • On the stability of surfaces of stressed solids
    • Srolovitz D.J. On the stability of surfaces of stressed solids. Acta Metallurgica 1989, 37(2):621-625.
    • (1989) Acta Metallurgica , vol.37 , Issue.2 , pp. 621-625
    • Srolovitz, D.J.1
  • 189
    • 13144300132 scopus 로고    scopus 로고
    • Structural properties of self-organized semiconductor nanostructures
    • Stangl J., Holý V., Bauer G. Structural properties of self-organized semiconductor nanostructures. Reviews of Modern Physics 2004, 76(3):725-783.
    • (2004) Reviews of Modern Physics , vol.76 , Issue.3 , pp. 725-783
    • Stangl, J.1    Holý, V.2    Bauer, G.3
  • 192
    • 0036026352 scopus 로고    scopus 로고
    • SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal-oxide-semiconductor
    • Sugii N., Yamaguchi S., Washio K. SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal-oxide-semiconductor. Journal of Vacuum Science and Technology B 2002, 20(5):1891-1896.
    • (2002) Journal of Vacuum Science and Technology B , vol.20 , Issue.5 , pp. 1891-1896
    • Sugii, N.1    Yamaguchi, S.2    Washio, K.3
  • 194
    • 0001329154 scopus 로고    scopus 로고
    • Nucleationless three-dimensional island formation in low-misfit heteroepitaxy
    • Sutter P., Lagally M.G. Nucleationless three-dimensional island formation in low-misfit heteroepitaxy. Physical Review Letters 2000, 84(20):4637-4640.
    • (2000) Physical Review Letters , vol.84 , Issue.20 , pp. 4637-4640
    • Sutter, P.1    Lagally, M.G.2
  • 195
    • 0036284751 scopus 로고    scopus 로고
    • Self-organization of nanostructures in semiconductor heteroepitaxy
    • Teichert C. Self-organization of nanostructures in semiconductor heteroepitaxy. Physics Reports - Review Section of Physics Letters 2002, 365(5-6):335-432.
    • (2002) Physics Reports - Review Section of Physics Letters , vol.365 , Issue.5-6 , pp. 335-432
    • Teichert, C.1
  • 196
    • 2842567225 scopus 로고    scopus 로고
    • Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
    • Teichert C., Lagally M.G., Peticolas L.J., Bean J.C., Tersoff J. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films. Physical Review B 1996, 53(24):16334-16337.
    • (1996) Physical Review B , vol.53 , Issue.24 , pp. 16334-16337
    • Teichert, C.1    Lagally, M.G.2    Peticolas, L.J.3    Bean, J.C.4    Tersoff, J.5
  • 198
    • 3343007423 scopus 로고
    • Competing relaxation mechanisms in strained layers
    • Tersoff J., LeGoues F.K. Competing relaxation mechanisms in strained layers. Physical Review Letters 1994, 72(22):3570-3573.
    • (1994) Physical Review Letters , vol.72 , Issue.22 , pp. 3570-3573
    • Tersoff, J.1    LeGoues, F.K.2
  • 199
    • 7244257542 scopus 로고    scopus 로고
    • Self-organization in growth of quantum dot superlattices
    • Tersoff J., Teichert C., Lagally M.G. Self-organization in growth of quantum dot superlattices. Physical Review Letters 1996, 76(10):1675-1678.
    • (1996) Physical Review Letters , vol.76 , Issue.10 , pp. 1675-1678
    • Tersoff, J.1    Teichert, C.2    Lagally, M.G.3
  • 201
    • 0035903403 scopus 로고    scopus 로고
    • Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction
    • Tezuka T., Sugiyama N., Takagi S. Fabrication of strained Si on an ultrathin SiGe-on-insulator virtual substrate with a high-Ge fraction. Applied Physics Letters 2001, 79(12):1798-1800.
    • (2001) Applied Physics Letters , vol.79 , Issue.12 , pp. 1798-1800
    • Tezuka, T.1    Sugiyama, N.2    Takagi, S.3
  • 204
    • 33847359977 scopus 로고    scopus 로고
    • Review of MEMS-based drug delivery and dosing systems
    • Tsai N.C., Sue C.Y. Review of MEMS-based drug delivery and dosing systems. Sensors and Actuators A - Physical 2007, 134(2):555-564.
    • (2007) Sensors and Actuators A - Physical , vol.134 , Issue.2 , pp. 555-564
    • Tsai, N.C.1    Sue, C.Y.2
  • 205
    • 67449136398 scopus 로고    scopus 로고
    • Silicon-germanium nanostructures for light emitters and on-chip optical interconnects
    • Tsybeskov L., Lockwood D.J. Silicon-germanium nanostructures for light emitters and on-chip optical interconnects. Proceedings of the IEEE 2009, 97(7):1284-1303.
    • (2009) Proceedings of the IEEE , vol.97 , Issue.7 , pp. 1284-1303
    • Tsybeskov, L.1    Lockwood, D.J.2
  • 207
    • 0001401661 scopus 로고    scopus 로고
    • Modification of the growth mode of Ge on Si by buried Ge islands
    • Usami N., Araki Y., Ito Y., Miura M., Shiraki Y. Modification of the growth mode of Ge on Si by buried Ge islands. Applied Physics Letters 2000, 76(25):3723-3725.
    • (2000) Applied Physics Letters , vol.76 , Issue.25 , pp. 3723-3725
    • Usami, N.1    Araki, Y.2    Ito, Y.3    Miura, M.4    Shiraki, Y.5
  • 208
    • 0035821114 scopus 로고    scopus 로고
    • Strain-driven self-positioning of micromachined structures
    • Vaccaro P.O., Kubota K., Aida T. Strain-driven self-positioning of micromachined structures. Applied Physics Letters 2001, 78(19):2852-2854.
    • (2001) Applied Physics Letters , vol.78 , Issue.19 , pp. 2852-2854
    • Vaccaro, P.O.1    Kubota, K.2    Aida, T.3
  • 210
    • 0034297559 scopus 로고    scopus 로고
    • Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)
    • Vailionis A., Cho B., Glass G., Desjardins P., Cahill D.G., Greene J.E. Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001). Physical Review Letters 2000, 85(17):3672-3675.
    • (2000) Physical Review Letters , vol.85 , Issue.17 , pp. 3672-3675
    • Vailionis, A.1    Cho, B.2    Glass, G.3    Desjardins, P.4    Cahill, D.G.5    Greene, J.E.6
  • 211
    • 58149354528 scopus 로고    scopus 로고
    • Understanding the elastic relaxation mechanisms of strain in Ge islands on pit-patterned Si(001) substrates
    • Vastola G., Montalenti F., Miglio L. Understanding the elastic relaxation mechanisms of strain in Ge islands on pit-patterned Si(001) substrates. Journal of Physics - Condensed Matter 2008, 20(45):454217.
    • (2008) Journal of Physics - Condensed Matter , vol.20 , Issue.45 , pp. 454217
    • Vastola, G.1    Montalenti, F.2    Miglio, L.3
  • 212
    • 0035846181 scopus 로고    scopus 로고
    • Thin-film thermoelectric devices with high room-temperature figures of merit
    • Venkatasubramanian R., Siivola E., Colpitts T., O'Quinn B. Thin-film thermoelectric devices with high room-temperature figures of merit. Nature 2001, 413(6856):597-602.
    • (2001) Nature , vol.413 , Issue.6856 , pp. 597-602
    • Venkatasubramanian, R.1    Siivola, E.2    Colpitts, T.3    O'Quinn, B.4
  • 214
    • 44949087447 scopus 로고    scopus 로고
    • Carrier concentration and temperature dependence of the electronic transport properties of epitaxial PbTe and PbTe/PbSe nanodot superlattices
    • Vineis C.J., Harman T.C., Calawa S.D., Walsh M.P., Reeder R.E., Singh R., Shakouri A. Carrier concentration and temperature dependence of the electronic transport properties of epitaxial PbTe and PbTe/PbSe nanodot superlattices. Physical Review B 2008, 77:235202.
    • (2008) Physical Review B , vol.77 , pp. 235202
    • Vineis, C.J.1    Harman, T.C.2    Calawa, S.D.3    Walsh, M.P.4    Reeder, R.E.5    Singh, R.6    Shakouri, A.7
  • 215
    • 0035449005 scopus 로고    scopus 로고
    • Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth
    • Voigtländer B. Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth. Surface Science Reports 2001, 43(5-8):127-254.
    • (2001) Surface Science Reports , vol.43 , Issue.5-8 , pp. 127-254
    • Voigtländer, B.1
  • 217
    • 4243634103 scopus 로고    scopus 로고
    • Semiconductor superlattices: a model system for nonlinear transport
    • Wacker A. Semiconductor superlattices: a model system for nonlinear transport. Physics Reports - Review Section of Physics Letters 2002, 357(1):1-111.
    • (2002) Physics Reports - Review Section of Physics Letters , vol.357 , Issue.1 , pp. 1-111
    • Wacker, A.1
  • 220
    • 0000486025 scopus 로고
    • Epitaxial effects on coherent phase-diagrams of alloys
    • Wood D.M., Zunger A. Epitaxial effects on coherent phase-diagrams of alloys. Physical Review B 1989, 40(6):4062-4089.
    • (1989) Physical Review B , vol.40 , Issue.6 , pp. 4062-4089
    • Wood, D.M.1    Zunger, A.2
  • 221
    • 0005834097 scopus 로고
    • Vertically self-organized InAs quantum box islands on GaAs(100)
    • Xie Q.H., Madhukar A., Chen P., Kobayashi N.P. Vertically self-organized InAs quantum box islands on GaAs(100). Physical Review Letters 1995, 75(13):2542-2545.
    • (1995) Physical Review Letters , vol.75 , Issue.13 , pp. 2542-2545
    • Xie, Q.H.1    Madhukar, A.2    Chen, P.3    Kobayashi, N.P.4
  • 223
    • 79956012165 scopus 로고    scopus 로고
    • Measurements of anisotropic thermoelectric properties in superlattices
    • Yang B., Liu W.L., Liu J.L., Wang K.L., Chen G. Measurements of anisotropic thermoelectric properties in superlattices. Applied Physics Letters 2002, 81(19):3588-3590.
    • (2002) Applied Physics Letters , vol.81 , Issue.19 , pp. 3588-3590
    • Yang, B.1    Liu, W.L.2    Liu, J.L.3    Wang, K.L.4    Chen, G.5
  • 224
    • 79955989836 scopus 로고    scopus 로고
    • Simultaneous measurements of Seebeck coefficient and thermal conductivity across superlattice
    • Yang B., Liu J.L., Wang K.L., Chen G. Simultaneous measurements of Seebeck coefficient and thermal conductivity across superlattice. Applied Physics Letters 2002, 80(10):1758-1760.
    • (2002) Applied Physics Letters , vol.80 , Issue.10 , pp. 1758-1760
    • Yang, B.1    Liu, J.L.2    Wang, K.L.3    Chen, G.4
  • 225
    • 4344646517 scopus 로고    scopus 로고
    • Evolution of a stress-driven pattern in thin bilayer films: Spinodal wrinkling
    • Yoo P.J., Lee H.H. Evolution of a stress-driven pattern in thin bilayer films: Spinodal wrinkling. Physical Review Letters 2003, 91(15):154502.
    • (2003) Physical Review Letters , vol.91 , Issue.15 , pp. 154502
    • Yoo, P.J.1    Lee, H.H.2
  • 231
    • 45749094969 scopus 로고    scopus 로고
    • Bending and buckling of rolled-up SiGe/Si microtubes using nanorobotic manipulation
    • Zhang L., Dong L.X., Nelson B.J. Bending and buckling of rolled-up SiGe/Si microtubes using nanorobotic manipulation. Applied Physics Letters 2008, 92(24):243102.
    • (2008) Applied Physics Letters , vol.92 , Issue.24 , pp. 243102
    • Zhang, L.1    Dong, L.X.2    Nelson, B.J.3
  • 232
    • 42149096610 scopus 로고    scopus 로고
    • Ring closure of rolled-up Si/Cr nanoribbons
    • Zhang L., Dong L.X., Nelson B.J. Ring closure of rolled-up Si/Cr nanoribbons. Applied Physics Letters 2008, 92(14):143110.
    • (2008) Applied Physics Letters , vol.92 , Issue.14 , pp. 143110
    • Zhang, L.1    Dong, L.X.2    Nelson, B.J.3
  • 237
    • 1842738090 scopus 로고    scopus 로고
    • Site-controlled and size-homogeneous Ge islands on prepatterned Si(001) substrates
    • Zhong Z.Y., Bauer G. Site-controlled and size-homogeneous Ge islands on prepatterned Si(001) substrates. Applied Physics Letters 2004, 84(11):1922-1924.
    • (2004) Applied Physics Letters , vol.84 , Issue.11 , pp. 1922-1924
    • Zhong, Z.Y.1    Bauer, G.2
  • 238
    • 0038782334 scopus 로고    scopus 로고
    • Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si(001) substrates
    • Zhong Z.Y., Halilovic A., Fromherz T., Schäffler F., Bauer G. Two-dimensional periodic positioning of self-assembled Ge islands on prepatterned Si(001) substrates. Applied Physics Letters 2003, 82(26):4779-4781.
    • (2003) Applied Physics Letters , vol.82 , Issue.26 , pp. 4779-4781
    • Zhong, Z.Y.1    Halilovic, A.2    Fromherz, T.3    Schäffler, F.4    Bauer, G.5
  • 239
    • 49149115740 scopus 로고    scopus 로고
    • Temperature dependence of ordered GeSi island growth on patterned Si(001) substrates
    • Zhong Z., Chen P., Jiang Z., Bauer G. Temperature dependence of ordered GeSi island growth on patterned Si(001) substrates. Applied Physics Letters 2008, 93(4):043106.
    • (2008) Applied Physics Letters , vol.93 , Issue.4 , pp. 043106
    • Zhong, Z.1    Chen, P.2    Jiang, Z.3    Bauer, G.4
  • 240
    • 0001058114 scopus 로고    scopus 로고
    • Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples
    • Zhu J.H., Brunner K., Abstreiter G. Two-dimensional ordering of self-assembled Ge islands on vicinal Si(001) surfaces with regular ripples. Applied Physics Letters 1998, 73(5):620-622.
    • (1998) Applied Physics Letters , vol.73 , Issue.5 , pp. 620-622
    • Zhu, J.H.1    Brunner, K.2    Abstreiter, G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.