Annealing of Ge nanocrystals on Si(001) at: Metastability of huts and the stability of pyramids and domes

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 7, 1998, Pages 3533-3536

  Medeiros Ribeiro, G ^a   Kamins, T ^a   Ohlberg, D ^a   Williams, R Stanley ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000415158     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.3533     Document Type: Article

References (21)

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21. T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Ohlberg, and R. S. Williams (unpublished), have observed significant alloying of Si into Ge nanocrystals for annealing at (Formula presented) using x-ray diffraction. Diffraction data collected for Ge nanocrystals on Si(001)annealed at (Formula presented)do not rule out alloying, since the shift observed in the center of the dome distribution after 30 s of annealing could be explained by an alloy of only 3% Si in Ge.