Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates

Applied Physics Letters

Volumn 93, Issue 4, 2008, Pages

  Zhong, Zhenyang ^a   Chen, Peixuan ^a   Jiang, Zuimin ^a   Bauer, Guenther ^b  

^a FUDAN UNIVERSITY   (China)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ECOLOGY; EPITAXIAL GROWTH; LANDFORMS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON; SUBSTRATES;

GROWTH REGIMES; HIGH TEMPERATURES; INTERMEDIATE TEMPERATURE RANGE; ISLAND GROWTH; LOW GROWTH TEMPERATURES; OPTIMUM GROWTH CONDITIONS; PATTERNED SUBSTRATES; QUALITATIVE MODELLING; SI SUBSTRATES; STATISTICAL INFORMATION; TEMPERATURE DEPENDENCES;

GROWTH KINETICS;

EID: 49149115740     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2965484     Document Type: Article

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