Alloying and strain relaxation in SiGe islands grown on pit-patterned Si(001) substrates probed by nanotomography

Nanoscale Research Letters

Volumn 4, Issue 9, 2009, Pages 1073-1077

  Pezzoli, F ^a   Stoffel, M ^a,b   Merdzhanova, T ^c   Rastelli, A ^a   Schmidt, O G ^a  

^a IFW DRESDEN   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

AFM; Alloying; Island; Lateral ordering; SiGe; Tomography; Wet etching

Indexed keywords

AFM; COMPOSITION GRADIENT; COMPOSITION PROFILE; ISLAND; LATERAL ORDERING; NANOTOMOGRAPHY; PATTERNED SUBSTRATES; QUANTITATIVE ANALYSIS; SI (001) SUBSTRATE; SIGE; SIGE ISLANDS; SIGE/SI;

ALLOYING; ASPECT RATIO; ATOMIC FORCE MICROSCOPY; CHEMICAL ANALYSIS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS; TOMOGRAPHY; WET ETCHING;

SUBSTRATES;

SIGE;

EID: 70349986624     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9360-4     Document Type: Article

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