Growth of self-assembled homogeneous SiGe-dots on Si (100)

Thin Solid Films

Volumn 294, Issue 1-2, 1997, Pages 291-295

  Schittenhelm, P ^a   Abstreiter, G ^a   Darhuber, A ^b   Bauer, G ^b   Werner, P ^c   Kosogov, A ^c  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

Germanium; Growth parameters; Molecular beam epitaxy; Silicon

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH;

SELF-ASSEMBLED HOMOGENEOUS DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0031072449     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(96)09248-6     Document Type: Article

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