Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)

Physical Review Letters

Volumn 85, Issue 17, 2000, Pages 3672-3675

  Vailionis, A ^a   Cho, B ^a   Glass, G ^a   Desjardins, P ^a   Cahill, David G ^a   Greene, J E ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SURFACE STRUCTURE; THREE DIMENSIONAL; TWO DIMENSIONAL;

GAS SOURCE MOLECULAR BEAM EPITAXY; MORPHOLOGICAL TRANSITION; STRAIN DRIVEN TRANSITION; TWO DIMENSIONAL TO THREE DIMENSIONAL TRANSITION;

PHASE TRANSITIONS;

EID: 0034297559     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.3672     Document Type: Article

References (29)

1. D. J. Eaglesham and M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990).
2. Y.-W. Mo et al., Phys. Rev. Lett. 65, 1020 (1990).
3. F. M. Ross, R. M. Tromp, and M. C. Reuter, Science 286, 1931 (1999).
4. M. Tomitori et al., Appl. Surf. Sci. 76/77, 322 (1994).
5. G. Medeiros-Ribeiro et al., Science 279, 353 (1998).
6. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994); V. A. Shchukin et al., Phys. Rev. Lett. 75, 2968 (1995); I. Daruka and A.-L. Barabási, Phys. Rev. Lett. 79, 3708 (1997); H. T. Dobbs et al., Phys. Rev. Lett. 79, 897 (1997).
7. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994); V. A. Shchukin et al., Phys. Rev. Lett. 75, 2968 (1995); I. Daruka and A.-L. Barabási, Phys. Rev. Lett. 79, 3708 (1997); H. T. Dobbs et al., Phys. Rev. Lett. 79, 897 (1997).
8. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994); V. A. Shchukin et al., Phys. Rev. Lett. 75, 2968 (1995); I. Daruka and A.-L. Barabási, Phys. Rev. Lett. 79, 3708 (1997); H. T. Dobbs et al., Phys. Rev. Lett. 79, 897 (1997).
9. J. Tersoff and F. K. LeGoues, Phys. Rev. Lett. 72, 3570 (1994); V. A. Shchukin et al., Phys. Rev. Lett. 75, 2968 (1995); I. Daruka and A.-L. Barabási, Phys. Rev. Lett. 79, 3708 (1997); H. T. Dobbs et al., Phys. Rev. Lett. 79, 897 (1997).
10. R. Heitz et al., Phys. Rev. Lett. 78, 4071 (1997).
11. A. J. Pidduck et al., Thin Solid Films 222, 78 (1992); K. M. Chen et al., Phys. Rev. B 56, R1700 (1997).
12. A. J. Pidduck et al., Thin Solid Films 222, 78 (1992); K. M. Chen et al., Phys. Rev. B 56, R1700 (1997).
13. J. A. Floro et al., Phys. Rev. B 59, 1990 (1999).
14. C. Priester and M. Lannoo, Phys. Rev. Lett. 75, 93 (1995); Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996).
15. C. Priester and M. Lannoo, Phys. Rev. Lett. 75, 93 (1995); Y. Chen and J. Washburn, Phys. Rev. Lett. 77, 4046 (1996).
16. H. Kim and J. E. Greene, J. Vac. Sci. Technol. A 17, 354 (1999); H. Kim et al., J. Appl. Phys. 82, 6062 (1997).
17. H. Kim and J. E. Greene, J. Vac. Sci. Technol. A 17, 354 (1999); H. Kim et al., J. Appl. Phys. 82, 6062 (1997).
18. I. Goldfarb et al., Surf. Sci. 394, 105 (1997).
19. F. Wu et al., Phys. Rev. Lett. 74, 574 (1995); B. Voigtländer and M. Kästner, Phys. Rev. B 60, R5121 (1999).
20. F. Wu et al., Phys. Rev. Lett. 74, 574 (1995); B. Voigtländer and M. Kästner, Phys. Rev. B 60, R5121 (1999).
21. S. A. Chaparro et al., Phys. Rev. Lett. 83, 1199 (1999).
22. The actual shape of the 3D islands during the prepyramid to pyramid transition changes from cosinelike at aspect ratio ≃ 0.04 to a complete {105}-faceted pyramid with aspect ratio = 0.1.
23. H. Gao, J. Mech. Phys. Solids 39, 443 (1991); B. J. Spencer and J. Tersoff, Phys. Rev. Lett. 79, 4858 (1997).
24. H. Gao, J. Mech. Phys. Solids 39, 443 (1991); B. J. Spencer and J. Tersoff, Phys. Rev. Lett. 79, 4858 (1997).
25. R. V. Kukta and L. B. Freund, J. Mech. Phys. Solids 45, 1835 (1997).
26. L. B. Freund (private communication).
27. Zheng Gai et al., Phys. Rev. B 59, 15230 (1999).
28. Chuan-Pu Liu et al., Phys. Rev. Lett. 84, 1958 (2000).
29. D. E. Jesson, M. Kästner, and B. Voigtländer, Phys. Rev. Lett. 84, 330 (2000).