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15444338600
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note
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-8 Pa. The Ge was deposited by an UHV mini electron beam evaporator. Depositions were performed at Si substrate temperatures of 600°C, as determined with a calibrated optical pyrometer. The amounts of Ge deposited ranged from 8 to 12 eq-ML, which we determined by counting Ge atoms with the STM at low coverages to calibrate the deposition rate.
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8
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15444343633
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thesis, University of California, Santa Barbara
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To obtain quantitative size and shape information on a statistically significant number of nanocrystals, we wrote a program, based on existing code [R. Mirim, thesis, University of California, Santa Barbara (1996)], to analyze the topographs. This program locates the (x, y) position of the nanocrystals, measures their height and base width along two orthogonal axes, and integrates to find their surface area and volume.
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Mirim, R.1
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5444230424
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13
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0000821548
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14
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15444357668
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note
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The fact that two different growth techniques [CVD (6) and PVD] with the same temperature and growth rates produced very similar nanocrystal size distributions suggests that energetic effects determine the final configuration for this particular system, whereas kinetics determines the initial configuration.
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15
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0030963445
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C.-C. Chen, A. B. Herhold, C. S. Johnson, A. P. Alivisatos, Science 276, 398 (1997); S. H. Tolbert and A. P. Alivisatos, ibid. 265, 373 (1994).
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0027959151
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