Dislocated epitaxial islands

Physical Review Letters

Volumn 85, Issue 19, 2000, Pages 4088-4091

  Liu, X H ^a   Ross, F M ^a   Schwarz, K W ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FILM GROWTH; SILICON; SUBSTRATES; TENSILE STRESS;

DISLOCATED EPITAXIAL ISLANDS;

METALLIC FILMS;

EID: 0034319815     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.4088     Document Type: Article

References (17)

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13. The free surface calculations discussed in this section were for dislocation loops in silicon, lying on the (111) plane, with b→ = 1/2 [101]. The surface normal is in the [001] direction.
14. In this approximation, only the dislocations under the surface contribute to the field, and the surface point self-interaction is treated by a simple reflection procedure, as described in Ref. [8].
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16. 10 Pa, and v = 0.22.
17. In order to avoid having to model junction formation, each set of Burgers vectors is injected on a different glide plane, the planes being spaced 5 atomic spacings apart. Thus the computed pattern has the nature of a dipole network. The appearance of the network depends only very weakly on the chosen dipole separation and, in fact, looks the same if junctions are allowed to form.