메뉴 건너뛰기




Volumn 70, Issue 23, 2004, Pages 1-7

Strain relief during Ge hut cluster formation on Si(001) studied by high-resolution LEED and surface-stress-induced optical deflection

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON; SILICON DERIVATIVE;

EID: 14044274990     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235313     Document Type: Article
Times cited : (19)

References (33)
  • 18
    • 0012422817 scopus 로고    scopus 로고
    • M. Horn-von Hoegen, Z. Kristallogr. 214, 591 (1999); 214, 684 (1999).
    • (1999) Z. Kristallogr. , vol.214 , pp. 684
  • 24
    • 85088492839 scopus 로고    scopus 로고
    • note
    • ∥=2 π/Γ.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.