Ge quantum dot molecules and crystals: Preparation and properties

Surface Science

Volumn 601, Issue 13, 2007, Pages 2787-2791

  Dais, Christian ^a   Solak, Harun H ^a   Ekinci, Yasin ^a   Müller, Elisabeth ^a   Sigg, Hans ^a   Grützmacher, Detlev ^a,b  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Extreme ultra violet interference lithography; Ge quantum dots; Quantum dot crystal

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM;

EXTREME ULTRA-VIOLET INTERFERENCE LITHOGRAPHY; GE QUANTUM DOTS; QUANTUM DOT CRYSTALS; TWO-DIMENSIONAL ARRAYS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34250754844     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.12.053     Document Type: Article

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