The fabrication and application of patterned Si(001) substrates with ordered pits via nanosphere lithography

Nanotechnology

Volumn 20, Issue 9, 2009, Pages

  Chen, Peixuan ^a   Fan, Yongliang ^a   Zhong, Zhenyang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ETCHINGS; FABRICATION PROCESS; IN-BETWEEN; KOH SOLUTIONS; NANOSPHERE LITHOGRAPHIES; PIT PATTERNS; QUANTUM DOTS; SCALABLE APPROACHES; SELECTIVE ETCHINGS; SELF-ASSEMBLED; SELF-ASSEMBLING; SI (001) SUBSTRATES; SI SUBSTRATES; SI-BASED;

CRYSTAL GROWTH; ETCHING; GERMANIUM; MOLECULAR BEAMS; MOLECULAR DYNAMICS; POLYSTYRENES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON COMPOUNDS; SPHERES; SUBSTRATES; THICKNESS MEASUREMENT;

SILICON;

GERMANIUM; GERMANIUM DERIVATIVE; GOLD; NANOSPHERE; POLYSTYRENE; POTASSIUM DERIVATIVE; QUANTUM DOT; SILICON; SILICON DIOXIDE; NANOMATERIAL;

ARTICLE; CATALYSIS; CONTROLLED STUDY; EVAPORATION; HYDROGENATION; LARGE SCALE PRODUCTION; MOLECULAR SIZE; MONOLAYER CULTURE; NANOFABRICATION; PERIODICITY; PRIORITY JOURNAL; PRODUCT DEVELOPMENT; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; PHOTOGRAPHY; SILICON DIOXIDE; SURFACE PROPERTIES;

EID: 65449151892     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/9/095303     Document Type: Article

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