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Volumn 34, Issue 5, 1999, Pages 583-595

Silicon-Based Heterostructures: Strained-Layer Growth by Molecular Beam Epitaxy

Author keywords

SiGe Si thin films; Silicon based heterostructures; Strained layer MBE

Indexed keywords


EID: 0042059297     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-4079(199906)34:5/6<583::AID-CRAT583>3.0.CO;2-X     Document Type: Article
Times cited : (13)

References (24)
  • 9
    • 2442452495 scopus 로고
    • Silicon Molecular Beam Epitaxy 1995
    • KASPER, E., PARKER, E.H.C. (eds.): Silicon Molecular Beam Epitaxy 1995, J. Cryst. Growth 157 (1995) nos. 1-4
    • (1995) J. Cryst. Growth , vol.157 , Issue.1-4
    • Kasper, E.1    Parker, E.H.C.2
  • 10
    • 0001689377 scopus 로고
    • Group IV Compounds
    • WILLARDSON, R.K., BEER, A.C. (eds.) 33 chapt. 4
    • KASPER, E., SCHEFFLER, F.: Group IV Compounds, in Semiconductors and Semimetals, WILLARDSON, R.K., BEER, A.C. (eds.) 33 (1991) chapt. 4
    • (1991) Semiconductors and Semimetals
    • Kasper, E.1    Scheffler, F.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.