Modification of the growth mode of Ge on Si by buried Ge islands

Applied Physics Letters

Volumn 76, Issue 25, 2000, Pages 3723-3725

  Usami, N ^a,b   Araki, Y ^a   Ito, Y ^a   Miura, M ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001401661     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126762     Document Type: Article

References (15)

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