Positioning of strained islands by interaction with surface nanogrooves

Physical Review Letters

Volumn 101, Issue 9, 2008, Pages

  Katsaros, G ^a,e   Tersoff, J ^b   Stoffel, M ^c   Rastelli, A ^c   Acosta Diaz, P ^a   Kar, G S ^a   Costantini, G ^a   Schmidt, O G ^c   Kern, K ^a,d  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IFW DRESDEN   (Germany)

^d EPFL   (Switzerland)

^e CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DISSOLUTION; GERMANIUM; QUANTUM ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

GE ISLANDS; NANO SCALING; NANOGROOVES; SELF-ASSEMBLED QUANTUM DOTS; SI(001);

LANDFORMS;

EID: 50849112794     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.101.096103     Document Type: Article

References (27)

1. See, e.g., J. Stangl, V. Holý, and G. Bauer, Rev. Mod. Phys. 76, 725 (2004). RMPHAT 0034-6861 10.1103/RevModPhys.76.725
2. S. Kohmoto, H. Nakamura, T. Ishikawa, and K. Asakawa, Appl. Phys. Lett. 75, 3488 (1999). APPLAB 0003-6951 10.1063/1.125364
3. T.I. Kamins, Appl. Phys. Lett. 74, 1773 (1999). APPLAB 0003-6951 10.1063/1.123683
4. Z. Zhong, Appl. Phys. Lett. 82, 4779 (2003). APPLAB 0003-6951 10.1063/1.1581986
5. Z. Zhong and G. Bauer, Appl. Phys. Lett. 84, 1922 (2004). APPLAB 0003-6951 10.1063/1.1664014
6. Lateral Alignment of Epitaxial Quantum Dots, edited by, O.G. Schmidt, (Springer, Berlin, 2007).
7. G. Chen, Appl. Phys. Lett. 92, 113106 (2008). APPLAB 0003-6951 10.1063/1.2898522
8. L. Vescan, J. Cryst. Growth 194, 173 (1998). JCRGAE 0022-0248 10.1016/S0022-0248(98)00714-3
9. J.L. Gray, R. Hull, and J.A. Floro, J. Appl. Phys. 100, 084312 (2006). JAPIAU 0021-8979 10.1063/1.2358003
10. A. Portavoce, R. Hull, M.C. Reuter, and F.M. Ross, Phys. Rev. B PRBMDO 0163-1829 76, 235301 (2007). 10.1103/PhysRevB.76.235301
11. C. Dais, Surf. Sci. 601, 2787 (2007). SUSCAS 0039-6028 10.1016/j.susc.2006.12.053
12. J.J. Zhang, Appl. Phys. Lett. 91, 173115 (2007). APPLAB 0003-6951 10.1063/1.2802555
13. A. Rastelli, Phys. Rev. Lett. 95, 026103 (2005). PRLTAO 0031-9007 10.1103/PhysRevLett.95.026103
14. C.T. Salling and M.G. Lagally, Science 265, 502 (1994). SCIEAS 0036-8075 10.1126/science.265.5171.502
15. C.T. Salling, I.I. Kravchenko, and M.G. Lagally, J. Vac. Sci. Technol. B 13, 2828 (1995). JVTBD9 0734-211X 10.1116/1.588298
16. T.U. Schülli, Phys. Rev. B PRBMDO 0163-1829 71, 035326 (2005). 10.1103/PhysRevB.71.035326
17. T.I. Kamins, E.C. Carr, R.S. Williams, and S.J. Rosner, J. Appl. Phys. 81, 211 (1997). JAPIAU 0021-8979 10.1063/1.364084
18. U. Denker, O.G. Schmidt, N.-Y. Jin-Phillipp, and K. Eberl, Appl. Phys. Lett. 78, 3723 (2001). APPLAB 0003-6951 10.1063/1.1378049
19. P. Sonnet and P.C. Kelires, Appl. Phys. Lett. 85, 203 (2004). APPLAB 0003-6951 10.1063/1.1771452
20. Y. Tu and J. Tersoff, Phys. Rev. Lett. 98, 096103 (2007). PRLTAO 0031-9007 10.1103/PhysRevLett.98.096103
21. D.T. Tambe and V.B. Shenoy, Appl. Phys. Lett. 85, 1586 (2004). APPLAB 0003-6951 10.1063/1.1787593
22. D.B. Migas, Phys. Rev. B PRBMDO 0163-1829 69, 235318 (2004). 10.1103/PhysRevB.69.235318
23. J. Tersoff and R.M. Tromp, Phys. Rev. Lett. 70, 2782 (1993). PRLTAO 0031-9007 10.1103/PhysRevLett.70.2782
24. J. Tersoff, B.J. Spencer, A. Rastelli, and H. von Känel, Phys. Rev. Lett. 89, 196104 (2002). PRLTAO 0031-9007 10.1103/PhysRevLett.89.196104
25. T.K. Carns, M.O. Tanner, and K.L. Wang, J. Electrochem. Soc. 142, 1260 (1995). JESOAN 0013-4651 10.1149/1.2044161
26. T.I. Kamins, G. Medeiros-Ribeiro, D.A.A. Ohlberg, and R. Stanley Williams, J. Appl. Phys. 85, 1159 (1999). JAPIAU 0021-8979 10.1063/1.369255
27. C. Teichert, Thin Solid Films 380, 25 (2000). THSFAP 0040-6090 10.1016/S0040-6090(00)01463-2