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Journal of Crystal Growth

Volumn 175-176, Issue PART 2, 1997, Pages 713-719

Self-assembled structures of closely stacked InAs islands grown on GaAs by molecular beam epitaxy

(4) Nakata, Yoshiaki a Sugiyama, Yoshihiro a Futatsugi, Toshiro a Yokoyama, Naoki a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

FULL WIDTH AT HALF MAXIMUM (FWHM); STRANSKI KRASTANOW GROWTH;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031140982 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)00814-7 Document Type: Article

Times cited : (88)

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