Strained n-MOSFET with embedded source/drain stressors and strain-transfer structure (STS) for enhanced transistor performance

IEEE Transactions on Electron Devices

Volumn 55, Issue 3, 2008, Pages 850-857

  Ang, Kah Weng ^a   Lin, Jianqiang ^a   Tung, Chih Hang ^b   Balasubramanian, Narayanan ^b   Samudra, Ganesh S ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Lateral tensile strain; n MOSFET; Silicon carbon (Si:C); Strain transfer structure (STS)

Indexed keywords

COMPUTER SIMULATION; FINITE ELEMENT METHOD; HETEROJUNCTIONS; SILICON COMPOUNDS; TENSILE STRAIN;

STRAIN-INDUCED MOBILITY ENHANCEMENT; STRAIN-TRANSFER STRUCTURE; TRANSISTOR DRIVE CURRENT;

MOSFET DEVICES;

EID: 40949121075     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.915053     Document Type: Article

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