In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth I. Si(001)/Ge

Surface Science

Volumn 349, Issue 2, 1996, Pages 129-144

  Hammar, M ^a,b   LeGoues, F K ^a   Tersoff, J ^a   Reuter, M C ^a   Tromp, R M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Chemical vapor deposition; Computer simulations; Epitaxy; Equilibrium thermodynamics and statistical mechanics; Germane; Germanium; Growth; Heterojunctions; Low index single crystal surfaces; Reflection electron microscopy (REM); Silane; Silicon

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; RELAXATION PROCESSES; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STATISTICAL MECHANICS; SURFACE PHENOMENA; SURFACE TENSION; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

EQUILIBRIUM THERMODYNAMICS; GERMANE; LOW INDEX SINGLE CRYSTAL SURFACES; REFLECTION ELECTRON MICROSCOPY; SINGLE CRYSTAL EPITAXY; SURFACE ROUGHENING; SURFACE STRESS; TRANSMISSION HIGH ENERGY ELECTRON DIFFRACTION;

EPITAXIAL GROWTH;

EID: 0030126448     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01068-8     Document Type: Article

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