SCOPUS 정보 검색 플랫폼

Journal of Physics Condensed Matter

Volumn 14, Issue 35, 2002, Pages 8283-8331

SiGe nanostructures: New insights into growth processes

(3) Berbezier, I a Ronda, A a Portavoce, A a,b

a CAMPUS DE LUMINY (France)

b AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONTINUUM MECHANICS; DIFFUSION IN SOLIDS; ELASTICITY; INTEGRATED CIRCUITS; KINETIC THEORY; MECHANICAL PROPERTIES; MORPHOLOGY; NUCLEATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

CONTINUUM ELASTICITY; HETEROJUNCTION BIPOLAR TRANSISTOR BASED INTEGRATED CIRCUITS; SILICON GERMANIUM NANOSTRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 0037048245 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/14/35/306 Document Type: Article

Times cited : (71)

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