Temperature effect on the formation of uniform self-assembled Ge dots

Applied Physics Letters

Volumn 83, Issue 14, 2003, Pages 2847-2849

  Jin, G ^a   Liu, J L ^b   Wang, K L ^c  

^a R and D Division   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; HIGH TEMPERATURE EFFECTS; SELF ASSEMBLY; SEMICONDUCTOR GROWTH; SILICON;

GROWTH TEMPERATURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0142260540     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1616978     Document Type: Article

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