SCOPUS 정보 검색 플랫폼

Volumn 89, Issue 1-3, 2002, Pages 101-105

Laterally aligned Ge/Si islands: A new concept for faster field-effect transistors

(10) Schmidt, O G a Denker, U a Dashiell, M a Jin Phillipp, N Y a Eberl, K a Schreiner, R b Grabeldinger H b Schweizer, H b Christiansen, S c Ernst, F d

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b UNIVERSITY OF STUTTGART (Germany)

c IBM T J WATSON RESEARCH CENTER (United States)

d CASE WESTERN RESERVE UNIVERSITY (United States)

Author keywords

CMOS; Field effect transistor; Modulation; MOFDET alignment; MOSFET; Self assembly islands

Indexed keywords

CMOS INTEGRATED CIRCUITS; LOW TEMPERATURE EFFECTS; MODULATION; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

SELF-ASSEMBLY ISLANDS;

MOSFET DEVICES;

EID: 0037074778 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(01)00810-8 Document Type: Conference Paper

Times cited : (22)

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