Electronic transport in nanometre-scale silicon-on-insulator membranes

Nature

Volumn 439, Issue 7077, 2006, Pages 703-706

  Zhang, Pengpeng ^a   Tevaarwerk, Emma ^a   Park, Byoung Nam ^a   Savage, Donald E ^a   Celler, George K ^b   Knezevic, Irena ^a   Evans, Paul G ^a   Eriksson, Mark A ^a   Lagally, Max G ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

^b Soitec USA ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; PHYSICAL PROPERTIES; SCANNING TUNNELING MICROSCOPY; SILICA; SILICON ON INSULATOR TECHNOLOGY; THERMODYNAMICS;

BULK DOPANTS; ELECTRONIC TRANSPORT MEASUREMENTS; NANOMETRE-SCALE SILICON-ON-INSULATOR MEMBRANES; SILICON MICROELECTRONIC DEVICES;

NANOTECHNOLOGY;

SILICON;

SILICON;

ARTICLE; ARTIFICIAL MEMBRANE; ELECTRON TRANSPORT; ENERGY; MEASUREMENT; PRIORITY JOURNAL; SCANNING TUNNELING MICROSCOPY; SURFACE PROPERTY;

EID: 32544460869     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature04501     Document Type: Article

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