Influence of growth temperature on interdiffusion in uncapped SiGe-islands on Si(001) determined by anomalous x-ray diffraction and reciprocal space mapping

Physical Review B - Condensed Matter and Materials Physics

Volumn 71, Issue 3, 2005, Pages

  Schulli T U ^a,b,d   Stoffel, M ^c   Hesse, A ^b   Stangl, J ^b   Lechner, R T ^b   Wintersberger, E ^b   Sztucki, M ^a   Metzger, T H ^a   Schmidt, O G ^c   Bauer, G ^b  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^d CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; GROWTH PERIOD; MATHEMATICAL ANALYSIS; RADIATION SCATTERING; TEMPERATURE; X RAY DIFFRACTION;

EID: 20144365362     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.71.035326     Document Type: Article

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