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Volumn 286, Issue 5446, 1999, Pages 1931-1934

Transition states between pyramids and domes during Ge/Si island growth

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; ELECTRON MICROSCOPY; GROWTH RATE; MODEL; PRIORITY JOURNAL; SEMICONDUCTOR; TEMPERATURE DEPENDENCE; THERMODYNAMICS;

EID: 0033521177 PISSN: 00368075 EISSN: None Source Type: Journal
DOI: 10.1126/science.286.5446.1931 Document Type: Article

Times cited : (460)

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15
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- We thank K. Pope for Rutherford backscattering analysis and J. Tersoff for helpful discussions
- We thank K. Pope for Rutherford backscattering analysis and J. Tersoff for helpful discussions.

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