Shaping Ge Islands on Si(001) Surfaces with Misorientation Angle

Physical Review Letters

Volumn 104, Issue 3, 2010, Pages

  Persichetti, L ^a   Sgarlata, A ^a   Fanfoni, M ^a   Balzarotti, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

2D NUCLEATION; ATOMIC SCALE; ENERGETIC FACTORS; FINITE ELEMENT CALCULATIONS; GE ISLAND; MISCUT DIRECTION; MISORIENTATION ANGLE; MORPHOLOGICAL EVOLUTION; SI(001) SURFACES; STEP-FLOW GROWTH;

GERMANIUM; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILICON; TWO DIMENSIONAL;

THREE DIMENSIONAL;

EID: 75149149817     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.036104     Document Type: Article

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