Self-assembled Ge/Si dots for faster field-effect transistors

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1175-1179

  Schmidt, O G ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Buffer; CMOS; Defect free; DotFET; MOSFETs; Nanotechnology; Ordering; Quantum dots; Self assembly; Si; SiGe; Transistor

Indexed keywords

GERMANIUM; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUBSTRATES;

DOT-BASED FIELD EFFECT TRANSISTORS (DOTFET); NANOCRYSTALS;

FIELD EFFECT TRANSISTORS;

EID: 0035367479     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925244     Document Type: Article

References (24)

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