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Volumn 43, Issue 5-8, 2001, Pages 127-254

Fundamental processes in Si/Si and Ge/Si epitaxy studied by scanning tunneling microscopy during growth

Author keywords

Epitaxy; Germanium; Molecular beam epitaxy; Nucleation; Scanning tunneling microscopy; Self assembly; Semiconductor s emiconductor thin film structures; Silicon

Indexed keywords

GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; MATHEMATICAL MODELS; NUCLEATION; PHASE INTERFACES; PHASE TRANSITIONS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; STRAIN MEASUREMENT; SURFACE TREATMENT;

EID: 0035449005     PISSN: 01675729     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0167-5729(01)00012-7     Document Type: Article
Times cited : (377)

References (254)
  • 211


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.