Free-standing SiGe-based nanopipelines on Si (001) substrates

Applied Physics Letters

Volumn 78, Issue 21, 2001, Pages 3310-3312

  Schmidt, O G ^a   Jin Phillipp, N Y ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035926983     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1373408     Document Type: Article

References (7)

1. V. Y. Prinz, V. A. Seleznev, and A. K. Gutakovsky, Proceedings of the 24th International Conference on the Physics of Semiconductors, Israel, 1998, p. Th3-D5.
2. O. G. Schmidt and K. Eberl, Nature (London) 410, 158 (2001).
3. V. Y. Prinz, V. A. Seleznev, A. K. Gutakovsky, A. V. Chehovkiy, V. V. Preobrazhenskii, M. A. Putyato, and T. A. Gavrilova, Physica E (Amsterdam) 6, 828 (2000).
4. V. Y. Prinz, S. V. Golod, V. I. Mashanov, and A. K. Gutakovsky, Inst. Phys. Conf. Ser. 166, 203 (2000).
5. Note that the epilayer thickness also depends on the selectivity of the etchant. In this letter, we assume that this effect is negligible.
6. K. Eberl, K. Brunner, and O. G. Schmidt, in Semiconductors and Semimetals edited by R. Hull and J. C. Bean (Academic, San Diego, 1999), Vol. 56, p. 387.
7. O. G. Schmidt and K. Eberl, Phys. Rev. Lett. 80, 3396 (1998).