Barrierless Formation and Faceting of SiGe Islands on Si(001)

Physical Review Letters

Volumn 89, Issue 19, 2002, Pages

  Tersoff, J ^a   Spencer, B J ^b   Rastelli, A ^c   von Kanel H ^d,e  

^a IBM RESEARCH   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

^c UNIVERSITY OF PAVIA   (Italy)

^d POLITECNICO DI MILANO   (Italy)

^e ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; MORPHOLOGY; NUCLEATION; PHASE TRANSITIONS; RELAXATION PROCESSES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; STIFFNESS; STRESSES; SURFACE PROPERTIES; TEMPERATURE;

ATOMIC-SCALE ROUGHNESS; CHEMICAL POTENTIAL; EFFECTIVE EQUILIBRIUM CRYSTAL SHAPE; FIRST-ORDER TRANSITION; SURFACE ENERGY ANISOTROPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0037021347     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.89.196104     Document Type: Article

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