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Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 8, 2002, Pages 853211-853218

Effect of overgrowth on shape, composition, and strain of SiGe islands on Si(001)

(8) Hesse, A a Stangl, J a Holy V a,d Roch, T a Bauer, G a Schmidt, O G b Denker, U b Struth, B c

a JOHANNES KEPLER UNIVERSITY LINZ (Austria)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

c EUROPEAN SYNCHROTRON RADIATION FACILITY (France)

d MASARYK UNIVERSITY (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

ARTICLE; CALCULATION; CHEMICAL ANALYSIS; CHEMICAL COMPOSITION; METHODOLOGY; RADIATION SCATTERING; TEMPERATURE; THEORY; X RAY DIFFRACTION;

EID: 0037104322 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.66.085321 Document Type: Article

Times cited : (73)

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