Spontaneous ordering of nanostructures on crystal surfaces

Reviews of Modern Physics

Volumn 71, Issue 4, 1999, Pages 1125-1171

  Shchukin, Vitaliy A ^a,b   Bimberg, Dieter ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033246392     PISSN: 00346861     EISSN: None     Source Type: Journal    
DOI: 10.1103/revmodphys.71.1125     Document Type: Review

References (245)

1. Alerhand, O. L., D. Vanderbilt, R. D. Meade, and J. D. Joan-nopoulos, 1988, Phys. Rev. Lett. 61, 1973.
2. Alferov, Zh. I., 1996, Proceedings of the Nobel Symposium 99, Arild, Sweden, 1996, Phys. Scr. 68, 32.
3. Alferov, Zh. I., 1996, Proceedings of the Nobel Symposium 99, Arild, Sweden, 1996, Phys. Scr. 68, 32.
4. Alferov, Zh. I., A. Yu. Egorov, A. E. Zhukov, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, B. Ya. Mel'tser, and V. M. Ustinov, 1992, Fiz. Tekh. Poluprovodn. 26, 1715 [Sov. Phys. Semicond. 26, 959 (1992)].
5. Alferov, Zh. I., A. Yu. Egorov, A. E. Zhukov, S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, B. Ya. Mel'tser, and V. M. Ustinov, 1992, Fiz. Tekh. Poluprovodn. 26, 1715 [Sov. Phys. Semicond. 26, 959 (1992)].
6. Andreev, A. F., 1980a, Pis'ma Zh. Éksp. Teor. Fiz. 32, 654 [JETP Lett. 32, 640 (1980)].
7. Andreev, A. F., 1980a, Pis'ma Zh. Éksp. Teor. Fiz. 32, 654 [JETP Lett. 32, 640 (1980)].
8. Andreev, A. F., 1980b, Zh. Éksp. Teor. Fiz. 80, 2042 [Sov. Phys. JETP 53, 1063 (1981)].
9. Andreev, A. F., 1980b, Zh. Éksp. Teor. Fiz. 80, 2042 [Sov. Phys. JETP 53, 1063 (1981)].
10. Andreev, A. F., and Yu. A. Kosevich, 1981, Zh. Éksp. Teor. Fiz. 81, 1435 [Sov. Phys. JETP 54, 761 (1981)].
11. Andreev, A. F., and Yu. A. Kosevich, 1981, Zh. Éksp. Teor. Fiz. 81, 1435 [Sov. Phys. JETP 54, 761 (1981)].
12. Apetz, R., L. Vescan, A. Hartmann, C. Dicker, and H. Lüth, 1995, Appl. Phys. Lett. 66, 445.
13. Asaro, R. J., and W. A. Tiller, 1972, Metall. Trans. A 3, 1789.
14. Aspnes, D. E., 1985, J. Vac. Sci. Technol. B 3, 1498.
15. Barabási, A.-L., 1997, Appl. Phys. Lett. 70, 2565.
16. Bartels, W. J., and W. Nijman, 1978, J. Cryst. Growth 44, 518.
17. Baski, A. A., and L. J. Whitman, 1995, Phys. Rev. Lett. 74, 956.
18. Bauer, E., 1958, Z. Kristallogr. 110, 372.
19. Belousov, M. V., N. N. Ledentsov, M. V. Maximov, P. D. Wang, I. N. Yassievich, N. N. Faleev, I. A. Kozin, V. M. Ustinov, P. S. Kop'ev, and C. M. Sotomayor Torres, 1995, Phys. Rev. B 51, 14 346.
20. Berti, M., A. V. Drigo, G. Rossetto, and G. Torzo, 1997, J. Vac. Sci. Technol. B 15, 1794.
21. Bimberg D., M. Grundmann, and N. N. Ledentsov, 1998, Quantum Dot Heterostructures (Wiley, Chichester, U.K.).
22. Bimberg, D., M. Grundmann, N. N. Ledentsov, S. S. Ruvimov, P. Werner, U. Richter, J. Heydenreich, V. M. Ustinov, P. S. Kop'ev, and Zh. I. Alferov, 1995, Thin Solid Films 267, 32.
23. Bimberg, D., F. Heinrichsdorff, R. K. Bauer, D. Gerthsen, D. Stenkamp, D. E. Mars, and J. N. Miller, 1992, J. Vac. Sci. Technol. B 10, 1793.
24. Bimberg, D., I. P. Ipatova, P. S. Kop'ev, N. N. Ledentsov, V. G. Malyshkin, and V. A. Shchukin, 1997, Uspekhi Fiz. Nauk 167, 552 [Phys. Usp. 40, 529 (1997)].
25. Bimberg, D., I. P. Ipatova, P. S. Kop'ev, N. N. Ledentsov, V. G. Malyshkin, and V. A. Shchukin, 1997, Uspekhi Fiz. Nauk 167, 552 [Phys. Usp. 40, 529 (1997)].
26. Bimberg, D., N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop'ev, and V. M. Ustinov, 1997, IEEE J. Sel. Top. Quantum Electron. 3, 196.
27. Bimberg, D., N. N. Ledentsov, M. Grundmann, N. Kirstaedter, O. G. Schmidt, M.-H. Mao, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, U. Gösele, and J. Heydenreich, 1996, Phys. Status Solidi B 194, 159.
28. Brandt, O., G. C. La Rocca, A. Heberle, A. Ruiz, and K. Ploog, 1992, Phys. Rev. B 45, 3803.
29. Bressler-Hill, V., A. Lorke, S. Varma, K. Pond, P. M. Petroff, and W. H. Weinberg, 1994, Phys. Rev. B 50, 8479.
30. Bressler-Hill, V., S. Varma, A. Lorke, B. Z. Nosho, P. M. Petroff, and W. H. Weinberg, 1995, Phys. Rev. Lett. 74, 3209.
31. Cerva, H., and H. Oppolzer, 1990, Prog. Cryst. Growth Charact. Mater. 20, 231.
32. Chakraverty, B. K., 1967, J. Phys. Chem. Solids 28, 2401.
33. Chen, K. M., D. E. Jesson, S. J. Pennycook, T. Thundat, and R. J. Warmack, 1995, Mater. Res. Soc. Symp. Proc. 399, 271.
34. Chen, K. M., D. E. Jesson, S. J. Pennycook, T. Thundat, and R. J. Warmack, 1997, Phys. Rev. B 56, R1700.
35. Chen, M., and W. Porod, 1995, J. Appl. Phys. 78, 1050.
36. Chen, Y., and J. Washburn, 1996, Phys. Rev. Lett. 77, 4046.
37. Chernov, A. A., 1961, Uspekhi Fiz. Nauk 73, 277 [Sov. Phys. Usp. 4, 116 (1961)].
38. Chernov, A. A., 1961, Uspekhi Fiz. Nauk 73, 277 [Sov. Phys. Usp. 4, 116 (1961)].
39. Chernov, A. A., 1984, Modern Crystallography III (Springer, Berlin).
40. Cirlin, G. E., V. G. Dubrovskii, V. N. Petroff, N. K. Polyakov, N. P. Korneeva, V. N. Demidov, A. O. Golubok, S. A. Masalov, D. V. Kurochkin, O. M. Gorbenko, N. I. Komyak, N. N. Ledentsov, Zh. I. Alferov, and D. Bimberg, 1998, in Proceedings of the 6th International Symposium "Nanostructures: Physics and Technology" St. Petersburg, Russia, 1998 (A.F. Ioffe Physical Technical Institute, St. Petersburg, Russia), p. 249.
41. Cirlin, G., G. M. Guryanov, A. O. Golubok, S. Ya. Tipissev, N. N. Ledentsov, P. S. Kop'ev, M. Grundmann, and D. Bimberg, 1995, Appl. Phys. Lett. 67, 97. .
42. Dabrowski, J., E. Pehlke, and M. Scheffler, 1994, Phys. Rev. B 49, 4790.
43. Darhuber, A. A., V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V. M. Ustinov, P. S. Kop'ev, A. O. Kosogov, and P. Werner, 1997, Appl. Phys. Lett. 70, 955.
44. Darhuber, A. A., P. Schittenhelm, V. Holy, J. Stangl, G. Bauer, and G. Abstreiter, 1997, Phys. Rev. B 55, 15 652.
45. Daruka, I., and A.-L. Barabási, 1997, Phys. Rev. Lett. 79, 3708.
46. Dobbs, H. T., D. D. Vvedensky, A. Zangwill, J. Johansson, N. Carlsson, and W. Seifert, 1997, Phys. Rev. Lett. 79, 897.
47. Drucker, J., 1993, Phys. Rev. B 48, 18203.
48. Duport, C., C. Priester, and J. Villain, 1997, in Morphological Organization in Epitaxial Growth and Removal, edited by Z. Zhang and M. Lagally (World Scientific, Singapore).
49. Eaglesham, D. J., and M. Cerullo, 1990, Phys. Rev. Lett. 64, 1943.
50. Eaglesham, D. J., A. E. White, L. C. Feldman, N. Moriya, and D. C. Jacobson, 1993, Phys. Rev. Lett. 70, 1643.
51. Eshelby, J. D., 1956, in Solid State Physics, Vol. 3, edited by F. Seitz and D. Turnbull (Academic, New York), p. 79.
52. Farnell, G. W., 1970, in Properties of Elastic Surface Waves. Vol. 6. Physical Acoustic, edited by W. P. Mason and R. N. Thurston (Academic, New York).
53. Fiorentini, V., M. Methfessel, and M. Scheffler, 1993, Phys. Rev. Lett. 71, 1051.
54. Floro, J. A., G. A. Lucadamo, E. Chason, L. B. Freund, M. Sinclair, R. D. Twesten, and R. Q. Hwang, 1998, Phys. Rev. Lett. 80, 4717.
55. Frank, F. C., and J. H. van der Merwe, 1949, Proc. R. Soc. London, Ser. A 198, 205.
56. Garcia, A., and J. E. Northrup, 1993, Phys. Rev. B 48, 17 350.
57. Garcia, J. M., G. Medeiros-Ribeiro, K. Schmidt, T. Ngo, J. L. Feng, A. Lorke, J. Kotthaus, and P. M. Petroff, 1997, Appl. Phys. Lett. 71, 2014.
58. Georgsson, K., N. Carlsson, L. Samuelson, W. Seifert, and L. R. Wallenberg, 1995, Appl. Phys. Lett. 67, 2981.
59. Gibbs, J. W., 1928, Collected Works, Vol. 1, Thermodynamics (Longmans, London).
60. Glas, F., C. Guille, P. Hénoc, and F. Housay, 1987, Inst. Phys. Conf. Ser. 87, 71.
61. Goldstein, L., F. Glas, J. Y. Marzin, M. N. Charasse, and G. Le Roux, 1985, Appl. Phys. Lett. 47, 1099.
62. Golubok, A. O., G. M. Gur'yanov, V. N. Petrov, Yu. B. Samsonenko, S. Ya. Tipisev, G. E. Tsyrlin, and N. N. Ledentsov, 1994, Fiz. Tekh. Poluprovodn. 28, 516 [Semiconductors 28, 317 (1994)].
63. Golubok, A. O., G. M. Gur'yanov, V. N. Petrov, Yu. B. Samsonenko, S. Ya. Tipisev, G. E. Tsyrlin, and N. N. Ledentsov, 1994, Fiz. Tekh. Poluprovodn. 28, 516 [Semiconductors 28, 317 (1994)].
64. Grinferd, M. A., 1986, Dokl. Akad. Nauk SSSR 290, 1358 [Sov. Phys. Dokl. 31, 831 (1986)].
65. Grinferd, M. A., 1986, Dokl. Akad. Nauk SSSR 290, 1358 [Sov. Phys. Dokl. 31, 831 (1986)].
66. Grossmann, A., W. Erley, J. B. Hannon, and H. Ibach, 1996, Phys. Rev. Lett. 77, 127.
67. Grundmann, M., J. Christen, N. N. Ledentsov, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, 1995a, Phys. Rev. Lett. 74, 4043.
68. Grundmann, M., N. N. Ledentsov, R. Heitz, L. Eckey, J. Christen, J. Böhrer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, and Zh. I. Alferov, 1995b, Phys. Status Solidi B 188, 249.
69. Grundmann, M., O. Stier, and D. Bimberg, 1995c, Phys. Rev. B 52, 11 969.
70. Guha, S., A. Madhukar, and K. C. Rajkumar, 1990, Appl. Phys. Lett. 57, 2110.
71. Güntherodt, H.-J., and R. Wiesendanger, editors, 1994, Scanning Tunneling Microscopy I, Springer Series in Surface Sciences No. 20 (Springer, Berlin).
72. Gurianov, G. M., G. E. Tsyrlin, V. N. Petrov, Yu. B. Samsonenko, V. B. Gubanov, N. K. Polyakov, A. O. Golubok, S. Ya. Tipisev, E. P. Musikhina, and N. N. Ledentsov, 1995, Fiz. Tekh. Poluprovodn. 29, 1642 [Semiconductors 29, 854 (1995)].
73. Gurianov, G. M., G. E. Tsyrlin, V. N. Petrov, Yu. B. Samsonenko, V. B. Gubanov, N. K. Polyakov, A. O. Golubok, S. Ya. Tipisev, E. P. Musikhina, and N. N. Ledentsov, 1995, Fiz. Tekh. Poluprovodn. 29, 1642 [Semiconductors 29, 854 (1995)].
74. Guryanov, G. M., G. E. Cirlin, A. O. Golubok, S. Ya. Tipisev, N. N. Ledentsov, V. A. Shchukin, M. Grundmann, D. Bimberg, and Zh. I. Alferov, 1996, Surf. Sci. 352-354, 646.
75. Guyer, J. E., and P. W. Voorhees, 1995, Phys. Rev. Lett. 74, 4031.
76. Guyer, J. E., and P. W. Voorhees, 1996, Phys. Rev. B 54, 11710.
77. Hahn, T., 1983, Editor, International Tables for Crystallography, Vol. A, Space Group Symmetry (Reidel, Dordrecht, The Netherlands).
78. Hatami, F., N. N. Ledentsov, M. Grundmann, J. Böhrer, F. Heinrichsdorff, M. Beer, D. Bimberg, S. S. Ruvimov, P. Werner, U. Gösele, J. Heydenreich, U. Richter, S. V. Ivanov, B. Ya. Meltser, P. S. Kop'ev, and Zh. I. Alferov, 1995, Appl. Phys. Lett. 67, 656.
79. Häusler, K., K. Eberl, F. Noll, and A. Trampert, 1996, Phys. Rev. B 54, 4913.
80. Heinrichsdorff, F., A. Krost, D. Bimberg, A. O. Kosogov, and P. Werner, 1998, Appl. Surf. Sci. 123/124, 725.
81. Heinrichsdorff, F., A. Krost, M. Grundmann, D. Bimberg, F. Bertram, J. Christen, A. Kosogov, P. Werner, J. Heydenreich, and U. Gösele, 1997, J. Cryst. Growth 170, 568.
82. Heinrichsdorff, F., A. Krost, M. Grundmann, D. Bimberg, A. Kosogov, P. Werner, F. Bertram, and J. Christen, 1996, in Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), Vol. 2, p. 1321.
83. Herring, C., 1951a, Phys. Rev. 82, 87.
84. Herring, C., 1951b, in The Physics of Powder Metallurgy, a symposium held at Bayside, New York, August 1949, edited by W. E. Kingston (McGraw-Hill, New York).
85. Hibino, H., T. Fukuda, M. Suzuki, Y. Hommo, T. Sato, M. Iwatsuki, K. Miki, and H. Tokumoto, 1993, Phys. Rev. B 47, 13 027.
86. Ipatova I. P., 1990, in Proceedings of the 20th International Conference on Physics of Semiconductors, Thessaloniki, Greece, 1990, edited by E. M. Anastassakis and J. D. Joannopoulos (World Scientific, Singapore), Vol. 2, p. 913.
87. Ipatova, I. P., V. G. Malyshkin, A. A. Maradudin, V. A. Shchukin, and R. F. Wallis, 1997, in Proceedings of the 23rd International Symposium on Compound Semiconductors, St. Petersburg, Russia, 1996, Inst. Phys. Conf. Ser. 155, 323.
88. Ipatova, I. P., V. G. Malyshkin, A. A. Maradudin, V. A. Shchukin, and R. F. Wallis, 1997, in Proceedings of the 23rd International Symposium on Compound Semiconductors, St. Petersburg, Russia, 1996, Inst. Phys. Conf. Ser. 155, 323.
89. Ipatova, I. P., V. G. Malyshkin, A. A. Maradudin, V. A. Shchukin, and R. F. Wallis, 1998, Phys. Rev. B 57, 12 969.
90. Ipatova, I. P., V. G. Malyshkin, A. Yu. Maslov, and V. A. Shchukin, 1993, Fiz. Tekh. Poluprovodn. 27, 285 [Semiconductors 27, 158 (1993)].
91. Ipatova, I. P., V. G. Malyshkin, A. Yu. Maslov, and V. A. Shchukin, 1993, Fiz. Tekh. Poluprovodn. 27, 285 [Semiconductors 27, 158 (1993)].
92. Ipatova, I. P., V. G. Malyshkin, and V. A. Shchukin, 1993, J. Appl. Phys. 74, 7198.
93. Ipatova, I. P., V. G. Malyshkin, and V. A. Shchukin, 1994, Philos. Mag. B 70, 557.
94. Ipatova, I. P., V. A. Shchukin, V. G. Malyshkin, A. Yu. Maslov, and E. Anastassakis, 1991, Solid State Commun. 78, 19.
95. Jeppesen, S., M. S. Miller, D. Hessman, B. Kowalski, I. Maximov, and L. Samuelson, 1996, Appl. Phys. Lett. 68, 2228.
96. Jesson, D. E., G. Chen, K. M. Chen, and S. J. Pennycook, 1998, Phys. Rev. Lett. 80, 5156.
97. Jesson, D. E., K. M. Chen, and S. J. Pennycook, 1996, MRS Bull. 21, 31.
98. Jesson, D. E., K. M. Chen, S. J. Pennycook, T. Thundat, and R. J. Warmack, 1996, Phys. Rev. Lett. 77, 1330.
99. Jesson, D. E., S. J. Pennycook, J.-M. Baribeau, and D. C. Houghton, 1993, Phys. Rev. Lett. 71, 1744.
100. Joós, B., T. L. Einstein, and N. C. Bartelt, 1991, Phys. Rev. B 43, 8153.
101. Joyce, B. A., J. H. Neave, P. J. Dobson, and P. K. Larsen, 1984, Phys. Rev. B 29, 814.
102. Kamins, T. I., E. C. Carr, R. S. Williams, and S. J. Rosner, 1997, J. Appl. Phys. 81, 211.
103. Kamins, T. I., G. Medeiros-Ribeiro, D. A. A. Ohlberg, and R. Stanley Williams, 1998, Appl. Phys. A: Mater. Sci. Process. 67, 1.
104. Kaminski, A. Yu., and R. A. Suris, 1996, in Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), Vol. 2, p. 1337.
105. Kamiya, I., D. E. Aspnes, H. Tanaka, L. T. Florez, J. P. Harbison, and R. Bhat, 1992, Phys. Rev. Lett. 68, 627.
106. Kastner, M. A., 1996, in Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), Vol. 1, p. 27.
107. Kasu, M., and N. Kobayashi, 1993, Appl. Phys. Lett. 62, 1262.
108. Kern, K., H. Niehus, A. Schatz, P. Zeppenfeld, J. George, and G. Comsa, 1991, Phys. Rev. Lett. 67, 855.
109. Khachaturyan, A. G., 1969, Phys. Status Solidi 35, 119.
110. Khachaturyan, A. G., 1974, Theory of Phase Transformations and the Structure of Solid Solution, in Russian (Nauka, Moscow).
111. Khachaturyan, A. G., 1983, Theory of Structural Transformations in Solids (Wiley, New York).
112. Kirstaedter, N., N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, S. S. Ruvimov, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, U. Richter, P. Werner, U. Gösele, and J. Heydenreich, 1994, Electron. Lett. 30, 1416.
113. Kobayashi, N., T. R. Ramachandran, P. Chen, and A. Madhukar, 1996, Appl. Phys. Lett. 68, 3299.
114. Koch, R., M. Borbonus, O. Haase, and K. H. Rieder, 1991, Phys. Rev. Lett. 67, 3416.
115. Kosevich, Yu. A., 1997, Prog. Surf. Sci. 55, 1.
116. Kosevich, A. M., Yu. A. Kosevich, and E. S. Syrkin, 1985, Zh. Éksp. Teor. Fiz. 88, 1089 [Sov. Phys. JETP 61, 639 (1985)].
117. Kosevich, A. M., Yu. A. Kosevich, and E. S. Syrkin, 1985, Zh. Éksp. Teor. Fiz. 88, 1089 [Sov. Phys. JETP 61, 639 (1985)].
118. Krestnikov, I. L., S. V. Ivanov, P. S. Kop'ev, N. N. Ledentsov, M. V. Maximov, A. V. Sakharov, S. V. Sorokin, C. M. Sotomayor Torres, D. Bimberg, and Zh. I. Alferov, 1998, J. Electron. Mater. 27, 72.
119. Krestnikov, I. L., P. S. Kop'ev, Zh. I. Alferov, M. Straßburg, N. N. Ledentsov, A. Hoffmann, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, and C. M. Sotomayor Torres, 1999, Phys. Rev. B, in press.
120. Krestnikov, I. L., M. Straßburg, M. Caesar, V. A. Shchukin, A. Hoffmann, U. W. Pohl, D. Bimberg, N. N. Ledentsov, V. G. Malyshkin, P. S. Kop'ev, Zh. I. Alferov, D. Litvinov, A. Rosenauer, and D. Gerthsen, 1998, in Proceedings of the 24th International Conference on Physics of Semiconductors, Jerusalem, Israel, 1998 (World Scientific, Singapore, in press).
121. Krost, A., F. Heinrichsdorff, D. Bimberg, A. Darhuber, and G. Bauer, 1996, Appl. Phys. Lett. 68, 785.
122. Kuan, T., and S. S. Iyer, 1991, Appl. Phys. Lett. 59, 2242.
123. Kurtenbach, A., K. Eberl, and T. Shitara, 1995, Appl. Phys. Lett. 66, 361.
124. Landau, L. D., and E. M. Lifshits, 1959, Theory of Elasticity (Pergamon, New York).
125. Landau, L. D., and E. M. Lifshits, 1960, Electrodynamics of Continuous Media (Pergamon, New York).
126. Landolt-Börnstein, 1982, Vol. 17b, Semiconductors. Physics of II-VI and I-VII Compounds, Semimagnetic Semiconductors, edited by O. Madelung (Springer, Berlin).
127. Larsen, P. K., and P. J. Dobson, Eds., 1988, Reflection High Energy Electron Diffraction and Electron Imaging of Surfaces, NATO ASI Series B: Physics Vol. 188 (Plenum, New York, 1988).
128. Ledentsov, N. N., 1996, in Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), Vol. 1, p. 19.
129. Ledentsov, N. N., D. Bimberg, Yu. M. Shernyakov, V. Kochnev, M. V. Maximov, A. V. Sakharov, I. L. Krestnikov, A. Yu. Egorov, A. F. Tsatsul'nikov, B. V. Volovik, V. M. Ustinov, P. S. Kop'ev, Zh. I. Alferov, A. O. Kosogov, and P. Werner, 1997, Appl. Phys. Lett. 70, 2888.
130. Ledentsov, N. N., J. Böhrer, D. Bimberg, I. V. Kochnev, M. V. Maximov, P. S. Kop'ev, Zh. I. Alferov, A. O. Kosogov, S. S. Ruvimov, P. Werner, and U. Gösele, 1996, Appl. Phys. Lett. 69, 1095.
131. Ledentsov, N. N., M. Grundmann, N. Kirstaedter, J. Christen, R. Heitz, J. Böhrer, F. Heinrichsdorff, D. Bimberg, S. S. Ruvimov, P. Werner, U. Richter, U. Gösele, J. Heydenreich, V. M. Ustinov, A. Yu. Egorov, M. V. Maximov, P. S. Kop'ev, and Zh. I. Alferov, 1994, in Proceedings of the 22nd International Conference on Physics of Semiconductors, Vancouver, Canada, 1994, edited by D. J. Lockwood (World Scientific, Singapore), Vol. 3, p. 1855.
132. Ledentsov, N. N., M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer, D. Bimberg, V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, A. O. Kosogov, P. Werner, U. Richter, U. Gösele, and J. Heydenreich, 1996, in Proceedings of the 7th International Conference on Modulated Semiconductor Structures, Madrid, Spain, 1995 [Solid-State Electron. 40, 785].
133. Ledentsov, N. N., M. Grundmann, N. Kirstaedter, O. Schmidt, R. Heitz, J. Böhrer, D. Bimberg, V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, S. S. Ruvimov, A. O. Kosogov, P. Werner, U. Richter, U. Gösele, and J. Heydenreich, 1996, in Proceedings of the 7th International Conference on Modulated Semiconductor Structures, Madrid, Spain, 1995 [Solid-State Electron. 40, 785].
134. Ledentsov, N. N., G. M. Gurianov, G. E. Tsyrlin, V. N. Petrov, Yu. B. Samsonenko, A. O. Golubok, and S. Ya. Tipisev, 1994, Fiz. Tekh. Poluprovodn. 28, 903
135. [Semiconductors 28, 526].
136. Ledentsov, N. N., I. L. Krestnikov, M. V. Maximov, S. V. Ivanov, S. L. Sorokin, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg, and C. M. Sotomayor Torres, 1996, Appl. Phys. Lett. 69, 1343.
137. Ledentsov, N. N., I. L. Krestnikov, M. V. Maximov, S. V. Ivanov, S. L. Sorokin, P. S. Kop'ev, Zh. I. Alferov, D. Bimberg, and C. M. Sotomayor Torres, 1997, Appl. Phys. Lett. 70, 2776.
138. Ledentsov, N. N., V. A. Shchukin, M. Grundmann, N. Kirstaedter, J. Böhrer, O. Schmidt, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, A. E. Zhukov, P. S. Kop'ev, S. V. Zaitsev, N. Yu. Gordeev, Zh. I. Alferov, A. I. Borovkov, A. O. Kosogov, S. S. Ruvimov, P. Werner, U. Gösele and J. Heydenreich, 1996, Phys. Rev. B 54, 8743.
139. Ledentsov, N. N., V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg, 1998. Fiz. Tekh. Poluprovodn. 32, 385 [Semiconductors 32, 343 (1998)].
140. Ledentsov, N. N., V. M. Ustinov, V. A. Shchukin, P. S. Kop'ev, Zh. I. Alferov, and D. Bimberg, 1998. Fiz. Tekh. Poluprovodn. 32, 385 [Semiconductors 32, 343 (1998)].
141. Leon, R., S. Fafard, D. Leonard, J. L. Merz, and P. M. Petroff, 1995, Appl. Phys. Lett. 67, 521.
142. Leonard, D., M. Krishnamurthy, C. M. Reaves, S. P. Denbaars, and P. M. Petroff, 1993, Appl. Phys. Lett. 63, 3203.
143. Leonard, D., K. Pond, and P. M. Petroff, 1994, Phys. Rev. B 50, 11 687.
144. Li, C., and C. Jagadish, 1996, Appl. Phys. Lett. 69, 2551.
145. Lian, G. D., J. Yuan, L. M. Brown, G. H. Kim, and D. A. Ritchie, 1998, Appl. Phys. Lett. 73, 49.
146. Lifshits, I. M., and V. V. Slyozov, 1958, Zh. Éksp. Teor. Fiz. 35, 479.
147. Madhukar, A., P. Chen, Q. Xie, A. Konkar, T. R. Ramachandran, N. P. Kobayashi, and R. Viswanathan, 1995, in Low Dimensional Structures prepared by Epitaxial Growth or Regrowth on Patterned Substrates (Proceedings of the NATO Advanced Workshop, 1995, Ringberg Castle, Germany), edited by K. Eberl, P. Petroff, and P. Demeester (Kluwer, Dordrecht, the Netherlands), p. 19.
148. Madhukar, A., Q. Xie, P. Chen, and A. Koknar, 1994, Appl. Phys. Lett. 64, 2727. Malyshkin, V. G., and V. A. Shchukin, 1993, Fiz. Tekh. Poluprovodn. 27, 1932 [Semiconductors 27, 1062 (1993)].
149. Madhukar, A., Q. Xie, P. Chen, and A. Koknar, 1994, Appl. Phys. Lett. 64, 2727. Malyshkin, V. G., and V. A. Shchukin, 1993, Fiz. Tekh. Poluprovodn. 27, 1932 [Semiconductors 27, 1062 (1993)].
150. Madhukar, A., Q. Xie, P. Chen, and A. Koknar, 1994, Appl. Phys. Lett. 64, 2727. Malyshkin, V. G., and V. A. Shchukin, 1993, Fiz. Tekh. Poluprovodn. 27, 1932 [Semiconductors 27, 1062 (1993)].
151. Maradudin, A. A., X. Huang, and A. P. Mayer, 1991, J. Appl. Phys. 70, 53.
152. Maradudin, A. A., and R. F. Wallis, 1980, Surf. Sci. 91, 423.
153. Marchenko, V. I., 1981, Zh. Éksp. Teor. Fiz. 81, 1141 [Sov. Phys. JETP 54, 605 (1981)].
154. Marchenko, V. I., 1981, Zh. Éksp. Teor. Fiz. 81, 1141 [Sov. Phys. JETP 54, 605 (1981)].
155. Marchenko, V. I., Pis'ma Zh. Éksp. Teor. Fiz. 33, 397 [JETP Lett. 33, 381 (1981)].
156. Marchenko, V. I., Pis'ma Zh. Éksp. Teor. Fiz. 33, 397 [JETP Lett. 33, 381 (1981)].
157. Marchenko, I. V., and A. Ya. Parshin, 1980, Zh. Éksp. Teor. Fiz. 79, 257 [Sov. Phys. JETP 52, 129 (1980)].
158. Marchenko, I. V., and A. Ya. Parshin, 1980, Zh. Éksp. Teor. Fiz. 79, 257 [Sov. Phys. JETP 52, 129 (1980)].
159. Men, F. K., W. E. Packard, and M. B. Webb, 1988, Phys. Rev. Lett. 61, 2469.
160. Mo, Y.-W., D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, 1990, Phys. Rev. Lett. 65, 1020.
161. Mo, Y.-W., B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally, 1989, Phys. Rev. Lett. 63, 2393.
162. Moison, J. M., F. Houzay, F. Barthe, L. Leprince, E. André, and O. Vatel, 1994, Appl. Phys. Lett. 64, 196.
163. Moll, N., A. Kley, E. Pehlke, and M. Scheffler, 1996, Phys. Rev. B 54, 8844.
164. Moll, N., M. Scheffler, and E. Pehlke, 1998, Phys. Rev. B, in press.
165. Mukherjee, S., E. Pehlke, and J. Tersoff, 1994, Phys. Rev. B 49, 1919.
166. Mullins, W. W., 1957, J. Appl. Phys. 28, 333.
167. Mullins, W. W., 1963, in Metal Surfaces: Structure, Energetics and Kinetics (American Society for Metals, Metals Park), p. 17.
168. Nabetani, Y., T. Ishikawa, S. Noda, and A. Sakaki, 1994, J. Appl. Phys. 76, 347.
169. Needs, R. J., 1987, Phys. Rev. Lett. 58, 53.
170. Neumann, W., H. Hofmeister, D. Conrad, K. Scheerschmidt, and S. Ruvimov, 1996, Z. Kristallogr. 211, 147.
171. Ng, Kwok-On and D. Vanderbilt, 1995, Phys. Rev. B 52, 2177.
172. Ngo, T. T., P. M. Petroff, H. Sakaki, and J. L. Merz, 1996, Phys. Rev. 53, 9618.
173. Nötzel, R., 1996, Semicond. Sci. Technol. 11, 1365.
174. Nötzel, R., N. N. Ledentsov, L. Däweritz, M. Hohenstein, and K. Ploog, 1991, Phys. Rev. Lett. 67, 3812.
175. Nötzel, R., J. Temmyo, and T. Tamamura, 1994, Nature (London) 369, 131.
176. Nozières, P., and D. E. Wolf, 1988, Z. Phys. B 70, 399 (Part I); 1988, Z. Phys. B 70, 507 (Part II).
177. Nozières, P., and D. E. Wolf, 1988, Z. Phys. B 70, 399 (Part I); 1988, Z. Phys. B 70, 507 (Part II).
178. Olson, J. M., and A. Kibbler, 1986, J. Cryst. Growth 77, 182.
179. Ourmazd, A., F. H. Baumann, M. Bode, and Y. Kim, 1990, Ultramicroscopy 34, 237.
180. Ozasa, K., Y. Aoyagi, Y. J. Park, and L. Samuelson, 1997, Appl. Phys. Lett. 71, 797.
181. Pehlke, E., N. Moll, A. Kley, and M. Scheffler, 1997, Appl. Phys. A: Solids Surf. 65, 525.
182. Pehlke, E., N. Moll, and M. Scheffler, 1996, in Proceedings of the 23rd International Conference on Physics of Semiconductors, Berlin, Germany, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), Vol. 2, p. 1301.
183. Ponchet, A., A. Le Corre, H. L'Haridon, B. Lambert, and S. Salaün, 1995, Appl. Phys. Lett. 67, 1850.
184. Portz, K., and A. A. Maradudin, 1977, Phys. Rev. B 16, 3535.
185. Qian, G.-X., R. M. Martin, and D. J. Chadi, 1988, Phys. Rev. B 38, 7649.
186. Ratsch, C., and A. Zangwill, 1993, Surf. Sci. 293, 123.
187. Reimer, L., 1984, Transmission Electron Microscopy, Springer Series in Optical Sciences, Vol. 36 (Springer, Berlin).
188. Reinhardt, F., W. Richter, A. B. Müller, D. Gursche, P. Kurpas, K. Ploska, K. C. Rose, M. Zorn, 1993, J. Vac. Sci. Technol. B 11, 1427.
189. Richter, W., and D.R.T. Zahn, 1996, in Optical Characterization of Epitaxial Semiconductor Layers, edited by G. Bauer and W. Richter (Springer, Berlin), p. 12.
190. Roitburd, A. L., 1976, Phys. Status Solidi A 37, 329.
191. Roland, C., and G. H. Gilmer, 1993, Phys. Rev. B 47, 16286.
192. Rosenauer, A., S. Kaiser, T. Reisinger, J. Zweck, W. Gebhardt, and D. Gerthsen, 1996, Optik (Stuttgart) 102, 63.
193. Rottman, C., and M. Wortis, 1984, Phys. Rep. 103, 59.
194. Ruvimov, S. S., and K. Scheerschmidt, 1995, Phys. Status Solidi A 150, 471.
195. Ruvimov, S. S., P. Werner, K. Scheerschmidt, U. Richter, U. Gösele, J. Heydenreich, N. N. Ledentsov, M. Grundmann, D. Bimberg, V. M. Ustinov, A. Yu. Egorov, P. S. Kop'ev, and Zh. I. Alferov, 1995, Phys. Rev. B 51, 14766.
196. Schittenhelm, P., M. Gail, J. Brunner, J. F. Nützel, and G. Abstreiter, 1995, Appl. Phys. Lett. 67, 1292.
197. Segmüller, A., I. C. Noyan, V. S. Speriosu, 1989, Prog. Cryst. Growth Charact. 18, 21.
198. Seifert, W., N. Carlsson, M. Miller, M.-E. Pistol, L. Samuelson, and L. R. Wallenberg, 1996, Proc. Cryst. Growth Charact. Mater. 33, 423.
199. Shchukin, V. A., 1996, in Proceedings of the 23rd International Conference on Physics of Semiconductors Berlin, Germany, 1996, edited by M. Scheffler and R. Zimmermann (World Scientific, Singapore), Vol. 2, p. 1261.
200. Shchukin, V. A., and D. Bimberg, 1998, Appl. Phys. A: Solids Surf. 67, 687.
201. Shchukin, V. A., D. Bimberg, V. G. Malyshkin, and N. N. Ledentsov, 1998, Phys. Rev. B 57, 12262.
202. Shchukin, V. A., A. I. Borovkov, N. N. Ledentsov, and D. Bimberg, 1995a, Phys. Rev. B 51, 10104.
203. Shchukin, V. A., A. I. Borovkov, N. N. Ledentsov, and P. S. Kop'ev, 1995b, Phys. Rev. B 51, 17767.
204. Shchukin, V. A., N. N. Ledentsov, M. Grundmann, and D. Bimberg, 1997, in Optical Properties of Low-Dimensional Semiconductors, - NATO ASI Series, Series E: Applied Physics, edited by G. Abstreiter, A. Aydinli, and J.-P. Leburton (Kluwer, Dordrecht, the Netherlands), p. 257.
205. Shchukin, V. A., N. N. Ledentsov, M. Grundmann, P. S. Kop'ev, and D. Bimberg, 1996, Surf. Sci. 352-354, 117.
206. Shchukin, V. A., N. N. Ledentsov, P. S. Kop'ev, and D. Bimberg, 1995, Phys. Rev. Lett. 75, 2968.
207. Shuttleworth, R., 1950, Proc. R. Soc. London, Ser. A 63, 444.
208. Snyder, C. W., B. G. Orr, D. Kessler, and L. M. Sander, 1991, Phys. Rev. Lett. 66, 3032.
209. Solomon, G. S., J. A. Trezza, A. F. Marshall, and J. S. Harris, Jr., 1996, Phys. Rev. Lett. 76, 952.
210. Spencer, B. J., P. W. Voorhees, and S. H. Davis, 1991, Phys. Rev. Lett. 67, 3696.
211. Spencer, B. J., and J. Tersoff, 1997, Phys. Rev. Lett. 79, 4858.
212. Srolovitz, D., 1989, Acta Metall. 37, 621.
213. Steimetz, E., F. Scheinle, J.-T. Zettler, and W. Richter, 1997, J. Cryst. Growth 170, 208.
214. Stranski, I. N., and L. Krastanow, 1937, Sitzungsber. Akad. Wiss. Wien, Math.-Naturwiss. Klasse 146, 797.
215. Straßburg, M., V. Kutzer, U. W. Pohl, A. Hoffmann, I. Broser, N. N. Ledentsov, D. Bimberg, A. Rosenauer, U. Fischer, D. Gerthsen, I. L. Krestnikov, M. V. Maximov, P. S. Kop'ev, and Zh. I. Alferov, 1998, Appl. Phys. Lett. 72, 942.
216. Tanaka, S., S. Iwai, and Y. Aoyagi, 1996, Appl. Phys. Lett. 62, 1376.
217. Tapfer, L., and K. Ploog, 1986, Phys. Rev. B 33, 5565.
218. Tersoff, J., 1991, Phys. Rev. B 43, 9377.
219. Tersoff, J., 1996, Phys. Rev. Lett. 77, 2017.
220. Tersoff, J., Y. H. Phang, Zh. Zhang, and M. G. Lagally, 1995, Phys. Rev. Lett. 75, 2730.
221. Tersoff, J., C. Teichert, and M. G. Lagally, 1996, Phys. Rev. Lett. 76, 1675.
222. Tersoff, J., and R. M. Tromp, 1993, Phys. Rev. Lett. 70, 2782.
223. Tournié, E., A. Trampert, and K. Ploog, 1994, Europhys. Lett. 25, 663.
224. Ustinov, V. M., A. Yu. Egorov, A. R. Kovsh, A. E. Zhukov, M. V. Maximov, A. F. Tsatsul'nikov, N. Yu. Gordeev, S. V. Zaitsev, Yu. M. Shernyakov, N. A. Bert, P. S. Kop'ev, Zh. I. Alferov, N. N. Ledentsov, J. Böhrer, D. Bimberg, A. O. Kosogov, P. Werner, U. Gösele, 1997, J. Cryst. Growth 175/176, 689.
225. Ustinov, V. M., E. R. Weber, S. Ruvimov, Z. Liliental-Weber, A. E. Zhukov, A. Yu. Egorov, A. R. Kovsh, A. F. Tsatsul'nikov, and P. S. Kop'ev, 1998, Appl. Phys. Lett. 72, 362.
226. Vanderbilt, D., 1992, Surf. Sci. 268, L300.
227. Vanderbilt, D., and L. K. Wickham, 1991, in Evolution of Thin-Film and Surface Microstructure, edited by C. V. Thompson, J. Y. Tsao, and D. J. Srolovitz, MRS Proceedings, Vol. 202 (MRS, Pittsburgh), p. 555.
228. Volmer, M., and A. Weber, 1926, Z. Phys. Chem. (Munich) 119, 277.
229. Volovik, B. V., A. Yu. Egorov, P. S. Kop'ev, A. R. Kovsh, I. E. Kozin, I. L. Krestnikov, M. V. Maximov, A. V. Sakharov, A. F. Tsatsul'nikov, V. M. Ustinov, A. E. Zhukov, Zh. I. Alferov, N. N. Ledentsov, M. Straßburg, A. Hoffmann, D. Bimberg, I. P. Soshnikov, and P. Werner, 1998, in Proceedings of the 24th International Conference on Physics of Semiconductors, Jerusalem, Israel, 1998 (World Scientific, Singapore, in press).
230. Wang, P. D., N. N. Ledentsov, C. M. Sotomayor Torres, P. S. Kop'ev, and V. M. Ustinov, 1994, Appl. Phys. Lett. 64, 1526.
231. Wang, P. D., N. N. Ledentsov, C. M. Sotomayor Torres, P. S. Kop'ev, and V. M. Ustinov, 1995, Appl. Phys. Lett. 66, 112.
232. Watson, G. M., D. Gibbs, D. M. Zehner, M. Yoon, and S. G. J. Mochrie, 1993, Phys. Rev. Lett. 71, 3166.
233. Wiesendanger, R., 1994, Scanning Probe Microscopy and Spectroscopy (Cambridge University Press, Cambridge).
234. Williams, E. D., R. J. Phaneuf, J. Wei, N. C. Bartelt, and T. L. Einstein, 1993, Surf. Sci. 294, 219.
235. Wolf, D. E., and P. Nozières, 1998, Z. Phs. B 70, 507 (Part II of Noziéres and Wolf, 1988).
236. Wolf, D., 1993, Phys. Rev. Lett. 70, 627.
237. Wu, W., J. R. Tucker, G. S. Solomon, and J. S. Harris, Jr., 1997, Appl. Phys. Lett. 71, 1083.
238. Wulff, G., 1901, Z. Kristallogr. Mineral. 34, 449.
239. Xie, Q., P. Chen, and A. Madhukar, 1994, Appl. Phys. Lett. 65, 2051.
240. Xie, Q., A. Madhukar, P. Chen, and N. Kobayashi, 1995, Phys. Rev. Lett. 75, 2542.
241. Xin, S. H., P. D. Wang, A. Yin, C. Kim, M. Dobrowolska, J. L. Merz, and J. K. Furdyna, 1996, Appl. Phys. Lett. 69, 3884.
242. Yang, W. H., and D. J. Srolovitz, 1993, Phys. Rev. Lett. 71, 1593.
243. Yao, J. Y., T. G. Andersson, and G. L. Dunlop, 1991, J. Appl. Phys. 69, 2224.
244. Zeppenfeld, P., M. Krzyzowski, C. Romainczuk, G. Comsa, and M. G. Lagally, 1994, Phys. Rev. Lett. 72, 2737.
245. Zuo, J.-K., R. J. Warmack, D. M. Zehner, and J. F. Wendelken, 1993, Phys. Rev. B 47, 10 743.