Shape transitions and island nucleation for Si/Ge molecular beam epitaxy on stripe-patterned Si (001) substrate

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 12, 2009, Pages

  Sanduijav, B ^a   Matei, D ^a,b   Chen, G ^a   Springholz, G ^a  

^a JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^b NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350706034     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.125329     Document Type: Article

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