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Volumn 83, Issue 19, 2003, Pages 4002-4004

Self-ordering of Ge islands on step-bunched Si(111) surfaces

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GROWTH (MATERIALS); LITHOGRAPHY; MONOLAYERS; NANOSTRUCTURED MATERIALS; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SILICON; SUBSTRATES;

EID: 0344083390     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1626260     Document Type: Article
Times cited : (69)

References (26)
  • 13
    • 0345585270 scopus 로고    scopus 로고
    • note
    • -2 is the ratio between the electromotive force F and the magnitude A of the step-step repulsion (see Ref. 10) and a = 0.382 nm is the value of the interatomic distance along the step edge normal to the [112̄] direction for a Si(111) surface.
  • 17
    • 0344291026 scopus 로고    scopus 로고
    • note
    • Partial alignment is maintained since the corners of the tetrahedral like islands point towards the [112] direction and irregularly shaped platelets decorate step edges (see Refs. 15 and 16).
  • 23
    • 0345153399 scopus 로고    scopus 로고
    • private communication
    • A. Saul and X. Fuhr (private communication).
    • Saul, A.1    Fuhr, X.2
  • 24
    • 0345585269 scopus 로고    scopus 로고
    • note
    • This is confirmed by the fact that, for each distribution, the distance between the first and the second set of peaks is ≈300 nm, in agreement with the island-island mean distance.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.