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Volumn 67, Issue 12, 2003, Pages 1213011-1213014

Practical design and simulation of silicon-based quantum-dot qubits

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

EID: 0042735693     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (240)

References (28)
  • 3
    • 33646618681 scopus 로고    scopus 로고
    • note
    • 28Si to minimize the effect of nuclear (Ref. 24) spins. It is generally expected that decoherence times in confined structures like quantum dots will exceed the bulk values.
  • 11
    • 33646614781 scopus 로고    scopus 로고
    • note
    • The electrostatic and Hartree-Fock calculations were performed using finite-element software, FLEXPDE©. Image potentials arising from the nontrivial gate structure were calculated selfconsistently using a numerical Green's function technique.(Test charges were first introduced into the heterostructure. The direct contributions from the test charges were then subtracted from the solutions to obtain exact image potentials.) The quantummechanical problem was approximated as a single envelope (Ref. 16) function. A basis set of 18 single-electron HartreeFock wave functions was obtained in real space on an adaptive finite-element mesh. A basis of about 50 two-electron wave functions was then constructed in the configuration interaction approach. The Hamiltonian matrix was computed and diagonalized, giving an essentially exact result for the envelope function. For the four-qubit simulation [Fig. 1(b)], the wave functions of the outer two electrons were found to have an insignificant overlap with the two center electrons. Their couplings were, therefore, treated as purely Coulombic. It was not possible to calculate directly the tiny values of J corresponding to high potential barriers between the quantum dots. In this regime, we made use of the nearly exponential dependence of J on the gate voltage to obtain extrapolations.
  • 14
    • 0003372328 scopus 로고    scopus 로고
    • edited by L.L. Sohn, L.P. Kouwenhoven, and G. Schön (Kluwer Academic Publishers, Dordrecht)
    • L.P. Kouwenhoven et al., in Mesoscopic Electron Transport, edited by L.L. Sohn, L.P. Kouwenhoven, and G. Schön (Kluwer Academic Publishers, Dordrecht, 1997), Vol. 345, pp. 105-214.
    • (1997) Mesoscopic Electron Transport , vol.345 , pp. 105-214
    • Kouwenhoven, L.P.1
  • 16
    • 33646613081 scopus 로고    scopus 로고
    • note
    • ±, although a complete treatment of the interface physics is still lacking. Using the estimate given in Ref. 25 (α≃0.5 Å) we predict a valley splitting of ΔE >0.06 meV (0.7 K) for our heterostructure - more than 10 times our dilution fridge temperature. By optimizing the heterostructure to increase the electric field in the quantum well, it is possible to increase ΔE significantly. At low temperatures then, all electrons should be in the valley-split ground state, with no interference effects of the type discussed in Ref. 26.
  • 17
    • 33646601488 scopus 로고    scopus 로고
    • note
    • The 104 estimate assumes two-qubit operations between any pair of qubits. In a linear qubit array with only nearest-neighbor couplings, a more restrictive threshold may be appropriate.
  • 18
    • 33646626350 scopus 로고    scopus 로고
    • note
    • -4 relative error in its duration. Such accuracy is currently beyond the limits of commercial pulse generation technology.
  • 19
    • 33646630305 scopus 로고    scopus 로고
    • Estimates are based on specifications for pulse amplitude jitter in PB-4 and PB-5 sub-MHz pulse generators from Berkeley Nucleonics Corporation (http://www.berkeleynucleonics.com).
  • 20
    • 33646624192 scopus 로고    scopus 로고
    • Specifications from the Agilent Technologies 8133 and 81100 families of GHz pulse generators are listed as δV/V<0.01 (http://www.agilent.com).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.