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Applied Physics Letters

Volumn 77, Issue 16, 2000, Pages 2509-2511

Effect of overgrowth temperature on the photoluminescence of Ge/Si islands

(5) Schmidt, O G a Denker, U a Eberl, K a Kienzle, O b Ernst, F b

a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001174136 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1318729 Document Type: Article

Times cited : (82)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.