In situ TEM study of the growth of Ge on Si(111)

Surface Science

Volumn 349, Issue 3, 1996, Pages 249-266

  LeGoues, F K ^a   Hammar, M ^a   Reuter, M C ^a   Tromp, R M ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Electron microscopy; Epitaxy; Semiconductor superconductor interfaces; Single crystal epitaxy; Superconductor semiconductor heterostructures

Indexed keywords

DEPOSITION; DIFFUSION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; HETEROJUNCTIONS; INTERFACES (MATERIALS); MONOLAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SUPERCONDUCTING MATERIALS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY;

SURFACE DIFFUSION;

CRYSTAL GROWTH;

EID: 0030126325     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)00900-0     Document Type: Article

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