Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

Materials Science and Engineering: B

Volumn 124-125, Issue SUPPL., 2005, Pages 466-469

  Shaleev, M V ^a   Novikov, A V ^a   Kuznetsov, O A ^b   Yablonsky, A N ^a   Vostokov, N V ^a   Drozdov, Yu N ^a   Lobanov, D N ^a   Krasilnik, Z F ^a  

^a INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^b NNSU   (Russian Federation)

Author keywords

Atomic force microscopy; Heterostructures; Photoluminescence; Self assembled islands

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL RELAXATION; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; MORPHOLOGY; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING SILICON COMPOUNDS;

BUFFER LAYERS; GROWTH TEMPERATURE; ISLANDS MORPHOLOGY; SELF-ASSEMBLED ISLANDS;

SEMICONDUCTING GERMANIUM;

EID: 27844470074     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2005.08.015     Document Type: Conference Paper

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