Ge dots and nanostructures grown epitaxially on Si

Journal of Physics Condensed Matter

Volumn 18, Issue 8, 2006, Pages

  Baribeau, J M ^a   Wu, X ^a   Rowell, N L ^a   Lockwood, D J ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION; EPITAXIAL GROWTH; MORPHOLOGY; NANOSTRUCTURED MATERIALS; NUCLEATION; SEMICONDUCTOR QUANTUM DOTS; SILICON; SUPERLATTICES;

GROWTH PARAMETERS; STRAIN DISTRIBUTION; WAVELENGTHS;

GERMANIUM;

EID: 32644450889     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/18/8/R01     Document Type: Article

References (230)

1. Ishimaru N, Ueba H and Tatsuyama C 1988 Surf. Sci. 193 193
2. Tatsuyama C, Ueba H and Kataoka Y 1988 Appl. Surf. Sci. 33/34 457
3. Swanson M L, Parikh N R, Frey E C, Sandhu G S, Chu W K, Jackman T E, Baribeau J-M, Kechang S and McCaffrey J 1989 Characterization of the Structure and Chemistry of Defects in Materials ed B C Larson, M Rühle and D N Seidman (Boston, MA: Materials Research Society) p 581
4. Eaglesham D J and Cerullo M 1990 Phys. Rev. Lett. 64 1943
5. Mo Y-W, Savage D E, Swartzentruber B S and Lagally M G 1990 Phys. Rev. Lett. 65 1020
6. Asaro R J and Tiller W A 1972 Metall. Trans. A 3 1789
7. Grinfeld M A 1986 Dokl. Akad. Nauk SSSR 290 1358
8. Teichert B 2002 Phys. Rep. 365 335
9. Zhang Z and Lagally M G (ed) 1998 Morphological Organization in Epitaxial Growth and Removal (Singapore: World Scientific) p 498
10. Brunner K 2002 Rep. Prog. Phys. 65 27
11. Baribeau J-M, Rowell N L and Lockwood D J 2006 Self-Organized Nanoscale Materials ed M Adachi and D J Lockwood (New York: Springer) p 1
12. Stangl A, Holý V and Bauer G 2004 Rev. Mod. Phys. 76 725
13. Baribeau J M, Jackman T E, Houghton D C, Maigné P and Denhoff M W 1988 J. Appl. Phys. 63 5738
14. Baribeau J-M 1995 J. Cryst. Growth 157 52
15. Baribeau J-M, Houghton D C, Jackman T E and McCaffrey J P 1989 J. Electrochem. Soc. 136 1158
16. Baribeau J-M, Delâge A, Janz S, Lafontaine H, Lockwood D J, McCaffrey J P, Moisa S, Rowell N L and Xu D-X 1999 Advanced Luminescent Materials and Quantum Confinement ed M Cahay, S Bandyopadhyay, D J Lockwood, J P Leburton, N Koshida, M Meyyappan and T Sakamoto (Pennington: The Electrochemical Society) p 45
17. Baribeau J-M, Lockwood D J, Dharma-wardana M W C, Rowell N L and McCaffrey J P 1989 Thin Solid Films 183 17
18. Lafontaine H, Houghton D C, Elliott D, Rowell N L, Baribeau J-M, Laframboise S, Sproule G I and Rolfe S J 1996 J. Vac. Sci. Technol. B 14 1675
19. Lafontaine H, Houghton D C, Bahierathan B, Perovic D D and Baribeau J-M 1999 Evolution of Expitaxial Structure and Morphology ed A Zangwill, D Jesson, D Chambliss and R Clarke (Pittsburg, PA: Materials Research Society) p 413
20. Lafontaine H, Rowell N L, Janz S and Xu D-X 1999 J. Appl. Phys. 86 1287
21. Baribeau J-M, Jackman T E, Houghton D C, Maigné P and Denhoff M W 1988 J. Appl. Phys. 63 5738
22. Baribeau J-M and Lafontaine H 1998 Thin Solid Films 321 141
23. Baribeau J-M 1998 J. Vac. Sci. Technol. B 16 1568
24. Baribeau J-M 1988 Appl. Phys. Lett. 52 105
25. Lockwood D J, Dharma-wardana M W C, Baribeau J-M and Houghton D C 1987 Phys. Rev. B 35 3243
26. Jain S C 1994 Germanium-Silicon Strained Layers and Heterostructures (Boston, MA: Academic)
27. Stranski I N and Krastanow L 1937 Sitz. ber, Akad. Wien, Mater. Nat. K1. IIb 146 797
28. Vailionis A, Cho B, Glass G, Desjardins P, Cahill D G and Greene J E 2000 Phys. Rev. Lett. 85 3672-5
29. Ross F M, Tromp R M and Reuter M C 1999 Science 286 1931
30. Tersoff J and LeGoues F K 1994 Phys. Rev. Lett. 72 3570
31. Shchukin V A, Ledentsov N N, Kop'ev P S and Bimberg D 1995 Phys. Rev. Lett. 75 2968
32. Shklyaev O E, Beck M J, Asta M, Miksis M J and Voorhees P W 2005 Phys. Rev. Lett. 94 176102
33. Lu G-H and Liu F 2005 Phys. Rev. Lett. 94 176103
34. Daruka I, Tersoff J and Barabási A-L 1999 Phys. Rev. Lett. 82 2753
35. Costantini G, Rastelli A, Manzano C, Songmuang R, Schmidt O G, Kern K and Känel H v 2004 Appl. Phys. Lett. 85 5673
36. Costantini G, Rastelli A, Manzano C, Acosta-Diaz P, Katsaros G, Songmuang R, Schmidt O G, Kanel H v and Kern K 2005 J. Cryst. Growth 278 38
37. Chaparro S A, Zhang Y, Drucker J, Chandrasekhar D and Smith D J 2000 J. Appl. Phys. 87 245
38. Drucker J and Chapparo S 1997 Appl. Phys. Lett. 71 614
39. Seta M D, Capellini G, Evangelisti F and Spinella C 2002 J. Appl. Phys. 92 614
40. Zhang Y and Drucker J 2003 J. Appl. Phys. 93 9583
41. Floro J A, Sinclair M B, Chason E, Freund L B, Twesten R D, Hwang R Q and Lucadamo G A 2000 Phys. Rev. Lett. 84 701
42. Liu P, Zhang Y W and Lu C 2003 Phys. Rev. B 68 035402
43. Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A and Williams R S 1999 J. Appl. Phys. 85 1159
44. Cho B, Schwarz-Selinger T, Ohmori K, Cahill D G and Greene J E 2002 Phys. Rev. B 66 195407
45. Capellini G, De Seta M and Evangelisti F 2002 Mater. Sci. Eng. B 89 184
46. Rastelli A, Kummer M and Känel H v 2001 Phys. Rev. Lett. 87 256101
47. Rastelli A, Muller E and Känel H v 2002 Appl. Phys. Lett. 80 1438
48. Loo R, Meunier-Beillard P, Vanhaeren D, Bender H, Caymax M, Vandervorst W, Dentel D, Goryll M and Vescan L 2001 J. Appl. Phys. 90 2565
49. Liu J P, Wang J Z, Huang D D, Li J P, Sun D Z and Kong M Y 1999 J. Cryst. Growth 207 150
50. Sutter P and Lagally M G 1998 Phys. Rev. Lett. 81 3471
51. Floro J A, Chason E, Twesten R D, Hwang R Q and Freund L B 1997 Phys. Rev. Lett. 79 3946-9
52. Walther T, Cullis A G, Norris D J and Hopkinson M 2001 Phys. Rev. Lett. 86 2381
53. Cullis A G, Norris D J, Walther T, Migliorato M A and Hopkinson M 2002 Phys. Rev. B 66 081305
54. Tu Y and Tersoff J 2004 Phys. Rev. Lett. 93 216101
55. Ginley R A, Chung D D L and Ginley D S 1984 Solid-State Electron. 27 137
56. Gao H 1994 J. Mech. Phys. Solids 42 741
57. Tu K-N, Mayer J W and Feldman L C 1992 Electronic Thin Film Science for Electrical Engineers and Materials Scientists Appendix E (New York: Macmillan)
58. Springholz G 2005 C. R. Phys. 6 89
59. Schmidt O G, Jin-Phillipp N Y, Lange C, Denker U, Eberl K, Schreiner R, Grabeldinger H and Schweizer H 2000 Appl. Phys. Lett. 77 4139
60. Stangl J, Roch T, Bauer G, Kegel I, Metzger T H, Schmidt O G, Eberl K, Kienzle O and Ernst F 2000 Appl. Phys. Lett. 77 3953
61. Le Thanh V and Yam V 2003 Appl. Surf. Sci. 212/213 296
62. Tersoff J, Teichert C and Lagally M G 1996 Phys. Rev. Lett. 76 1675
63. Sutter E, Sutter P and Vescan L 2002 Mater. Sci. Eng. B 89 196
64. Silvestre C, Jernigan G G, Twigg M E and Thompson P E 1998 J. Vac. Sci. Technol. B 16 1933
65. Lichtenberger H, Muhlberger M and Schäffler F 2005 Appl. Phys. Lett. 86 131919
66. Lichtenberger H, Muhlberger M, Schelling C and Schäffler F 2005 J. Cryst. Growth 278 78
67. Brunner K, Zhu J, Miesner C, Abstreiter G, Kienzle O and Ernst F 2000 Physica E 7 881
68. Cullis A G, Robbins D J, Barnett S J and Pidduck A J 1994 J. Vac. Sci. Technol. A 12 1924
69. Stangl J, Daniel A, Holý V, Roch T, Bauer G, Kegel I, Metzger T H, Wiebach T, Schmidt O G and Eberl K 2001 Appl. Phys. Lett. 79 1474
70. Hesse A, Stangl J, Holý V, Roch T, Bauer G, Schmidt O G, Denker U and Struth B 2002 Phys. Rev. B 66 085321
71. Schülli T U, Stangl J, Zhong Z, Lechner R T, Sztucki M, Metzger T H and Bauer G 2003 Phys. Rev. Lett. 90 066105
72. Magalhaes-Paniago R, Medeiros-Ribeiro G, Malachias A, Kycia S, Kamins T I and Williams R S 2002 Phys. Rev. B 66 245312/1
73. Malachias A, Kycia S, Medeiros-Ribeiro G, Magalhaes-Paniago R, Kamins T I and Williams R S 2003 Phys. Rev. Lett. 91 176101
74. Schmidt O G and Eberl K 2000 Phys. Rev. B 61 13721-9
75. Schmidt O G, Denker U, Christiansen S and Ernst F 2002 Appl. Phys. Lett. 81 2614
76. Zhi D, Wei M, Pashley D W, Joyce B A, Weyland M, Laffont L, Yates T J V, Twitchett A C, Dunin-Borkowski R E and Midgley P A 2004 Electron Microscopy and Analysis 2003 ed S McVitie and D McComb (Oxford: Institute of Physics Publishing) p 39
77. Lang C, Nguyen-Manh D and Cockayne D J H 2004 EMAG2003: Electron Microscopy and Analysis Group Conference ed S McVitie and D McComb (Oxford: Institute of Physics Publishing) p 35
78. Yates T J V, Laffont L, Zhi D and Midgley P A 2004 EMAG2003: Electron Microscopy and Analysis Group Conference ed S McVitie and D McComb (Oxford: Institute of Physics Publishing) p 31
79. Zhi D, Midgley P A, Dunin-Borkowski R E, Joyce B, Pashley D W, Bleloch A L and Goodhew P J 2005 Group-IV Semiconductor Nanostructures ed L Tsybeskov, D J Lockwood, C Delerue and M Ichikawa (Pittsburgh, PA: Materials Research Socitey) p F5.4.1
80. Miller P D, Liu C-P and Murray Gibson J 2000 Ultramicroscopy 84 225
81. Liu C-P, Twesten R D and Gibson J M 2000 Ultramicroscopy 87 79
82. Baribeau J-M, Wu X and Lockwood D J 2005 J. Vac. Sci. Technol. B at press
83. Smith D J, Chandrasekhar D, Chaparro S A, Crozier P A, Drucker J, Floyd M, McCartney M R and Zhang Y 2003 J. Cryst. Growth 259 232
84. Fukatsu S, Fujita K, Yaguchi H, Shiraki Y and Ito R 1991 Appl. Phys. Lett. 59 2103
85. Ohta G, Fukatsu S, Ebuchi Y, Hattori T, Usami N and Shiraki Y 1994 Appl. Phys. Lett. 65 2975
86. Liu C P, Gibson J M, Cahill D G, Kamins T I, Basile D P and Williams R S 2000 Phys. Rev. Lett. 84 1958
87. Neumann W, Kirmse H, Hausler I, Otto R and Hahnert I 2004 J. Alloys Compounds 382 2
88. Chen Y and Washburn J 1996 Phys. Rev. Lett. 77
89. Ide T, Sakai A and Shimizu K 1999 Thin Solid Films 357 22
90. Raiteri P, Miglio L, Valentinotti F and Celino M 2002 Appl. Phys. Lett. 80 3736
91. Huang C J, Zuo Y H, Li D Z, Cheng B W, Luo L P, Yu J Z and Wang Q M 2001 Appl. Phys. Lett. 78 3881
92. Denker U, Schmidt O G, Jin-Philipp N-Y and Eberl K 2001 Appl. Phys. Lett. 78 3723
93. Liao X Z, Zou J, Cockayne D J H, Qin J, Jiang Z M, Wang X and Leon R 1999 Phys. Rev. B 60 15605
94. Sonnet P and Kelires P C 2004 Appl. Phys. Lett. 85 203
95. Menéndez J 2000 Raman Scattering in Materials Science ed W H Weber and R Merlin (Berlin: Springer) p 55
96. Wasilewski Z R, Dion M M, Lockwood D J, Poole P, Streater R W and SpringThorpe A J 1997 J. Appl. Phys. 81 1883
97. Lockwood D J, Radomski R and Wasilewski Z R 2002 J. Raman Spectrosc. 33 202
98. Ruf T 1998 Phonon Raman Scattering in Semiconductors, Quantum Wells and Superlattices (Berlin: Springer)
99. Shin H K, Lockwood D J and Baribeau J-M 2000 Solid State Commun. 114 505
100. Tang Y S, Sotomayer Torres C M, Dietrich B, Kessinger W, Whall T E and Parker E H C 1995 Solid State Commun. 94 369
101. Talochkin A B, Markov V A, Suprun S P and Nikiforov A I 1996 JETP Lett. 64 219
102. Wang X, Jiang Z-M, Zhu H J, Huang D, Liu X, Hu C W, Chen Y, Zhu Z and Yao T 1997 Appl. Phys. Lett. 71 3543
103. Darhuber A A, Grill T, Stangl A, Bauer G, Lockwood D J, Noël J-P, Wang P D and Sotomayer Torres C M 1998 Phys. Rev. B 58 4825
104. Kwok S H, Yu P Y, Tung C H, Zhang Y H, Li M F, Peng C S and Zhou J M 1999 Phys. Rev. B 59 4980
105. Liu J L, Tang Y S, Wang K L, Radetic T and Gronsky R 1999 Appl. Phys. Lett. 74 1863
106. Talochkin A B, Markov V A, Nikiforov A I and Tiis S A 1999 JETP Lett. 70 288
107. Zhu J H, Meisner C, Brunner K and Abstreiter G 1999 Appl. Phys. Lett. 75 2395
108. Kolobov A V and Tanaka K 1999 Appl. Phys. Lett. 75 3572
109. Liu J L, Jin G, Tang Y S, Luo Y H, Wang K L and Yu D P 2000 Appl. Phys. Lett. 76 586
110. Kolobov A V 2000 J. Appl. Phys. 87 2926
111. Liu J L, Jin G, Tang Y S, Luo Y H, Wang K L and Yu D P 2000 J. Electron. Mater. 29 554
112. Milekhin A, Stepina N P, Yakimov A I, Schulze S and Zahn D R T 2000 Eur. Phys. J. B 16 355
113. Yu P Y 2001 Appl. Phys. Lett. 78 1160
114. Guedj C, Beyer A, Müller E and Grützmacher D 2001 Appl. Phys. Lett. 78 1742
115. Milekhin A, Stepina N P, Yakimov A I, Nikiforov A I, Schulze S and Zahn D R T 2001 Appl. Surf. Sci. 175/176 629
116. Cazayous M, Groenen J, Huntzinger J R, Mlayah A and Schmidt O G 2001 Phys. Rev. B 64 033306
117. Milekhin A G, Nikiforov A I, Pchelyakov O P, Schulze S and Zahn D R T 2001 JETP Lett. 73 461
118. Wan J, Luo Y H, Jiang Z M, Jin G, Liu J L, Liao X Z, Wang K L and Zou J 2001 J. Appl. Phys. 90 4290
119. Milekhin A G, Nikiforov A I, Pchelyakov O P, Schulze S and Zahn D R T 2002 Physica E 13 982
120. Kolobov A V, Oyanagi H, Brunner K, Abstreiter G, Maeda Y, Shklyaev A A, Yamasaki S, Ichikawa M and Tanaka K 2002 J. Vac. Sci. Technol. A 20 1116
121. Kolobov A V, Morita K, Itoh K M and Haller E E 2002 Appl. Phys. Lett. 81 3855
122. Ren S-F and Cheng W 2002 Phys. Rev. B 66 205328
123. Liu J L, Wan J, Jiang Z M, Khitun A, Wang K L and Yu D P 2002 J. Appl. Phys. 92 6804
124. Darma Y, Murakami H and Miyazaki S 2003 Japan. J. Appl. Phys. 42 4129
125. Tan P H, Brunner K, Bougeard D and Abstreiter G 2003 Phys. Rev. B 68 125302/1
126. Kamenev B V, Grebel H, Tsybeskov L, Kamins T I, Williams R S, Baribeau J M and Lockwood D J 2003 Appl. Phys. Lett. 83 5035
127. Kamenev B V, Tsybeskov L, Baribeau J-M and Lockwood D J 2004 Appl. Phys. Lett. 84 1293
128. Yang Z, Shi Y, Yan B, Huang Z X, Pu L, Zheng Y D and Wang K L 2003 Chin. Phys. Lett. 20 2001
129. Rzaev M M, Burbaev T M, Kurbatov V A, Melnik N N, Muhlberger M, Pogosov A O, Schäffler F, Sibeldin N N, Tsvetkov V A, Werner P, Zakharov N D and Zavaritskaya T N 2003 Phys. Status Solidi c 4 1262
130. Talochkin A B and Teys S A 2002 JETP Lett. 75 264
131. Teo K L, Shen Z X and Schmidt O G 2004 Phys. Status Solidi b 241 3274
132. Valakh M Y et al 2005 Phys. Solid State 47 54
133. Milekhin A G, Nikiforov A I, Ladanov M Y, Pchelyakov O P, Schulze S and and Zahn D R T 2004 Phys. Solid State 46 92
134. Dzhagan V N, Krasil'nik Z F, Lytvyn P M, Novikov A V, Valakh M Y and Yukhymchuk V O 2003 Semicond. Phys. Quantum Electron. Optoelectron. 6 164
135. Milekhin A G, Nikiforov A I, Pchelyakov O P, Rodrigues A G, Galzerani J C and Zahn D R T 2005 JETP Lett. 81 30
136. Lockwood D J, Xu H X and Baribeau J-M 2003 Phys. Rev. B 68 115308
137. Lockwood D J and Baribeau J-M 1992 Phys. Rev. B 45 8565
138. Baribeau J-M and Lockwood D J 1992 Thin Films, Stresses and Mechanical Properties III ed W D Nix, J C Bravman, E Artz and L B Freund (Boston, MA: Materials Research Society) p 449
139. Dismukes J P, Ekstrom L and Paff R J 1964 J. Phys. Chem. 68 3021
140. Fuchs H D, Grein C H, Alonso M I and Cardona M 1991 Phys. Rev. B 44 13120
141. Dharma-wardana M W C, Aers G C, Lockwood D J and Baribeau J-M 1990 Phys. Rev. B 41 5319
142. Tan P H, Bougeard D, Abstreiter G and Brunner K 2004 Appl. Phys. Lett. 84 2632
143. Lockwood D J, Baribeau J-M, Jackman T E, Aebi P, Tyliszczak T, Hitchcock A P and Headrick R L 1993 Scanning Microsc. 7 457
144. Schmidt O G, Lange C and Eberl K 1999 Phys. Status Solidi b 215 319
145. Rokhinson L P, Tsui D C, Benton J L and Xie Y-H 1999 Appl. Phys. Lett. 75 2413
146. Lobanov D N, Novikov A V, Vostokov N V, Drozdov Y N, Yablonskiy A N, Krasilnik Z F, Stoffel M, Denker U and Schmidt O G 2005 Opt. Mater. 27 818
147. Stoffel M, Kar G S, Denker U, Rastelli A, Sigg H and Schmidt O G 2004 Physica E 23 421
148. Martinelli L, Marzegalli A, Raiteri P, Bollani M, Montalenti F, Miglio L, Chrastina D, Isella G and Känel H v 2004 Appl. Phys. Lett. 84 2895
149. Chen P S, Lee S W, Peng Y H, Liu C W and Tsai M J 2004 Phys. Status Solidi b 241 3650
150. Vostokov N V, Krasil'nik Z F, Lobanov D N, Novikov A V, Shaleev M V and Yablonsky A N 2005 Phys. Solid State 47 38
151. Rowell N L, Noël J-P, Houghton D C, Wang A, Lenchyshyn L C, Thewalt M L W and Perovic D D 1993 J. Appl. Phys. 74 2790
152. Hartmann A, Vescan L, Dieker C, Stoica T and Lüth H 1993 Phys. Rev. B 48 18276
153. Dashiell M W, Denker U, Muller C, Costantini G, Manzano C, Kern K and Schmidt O G 2002 Appl. Phys. Lett. 80 1279
154. Luryi S, Kastalsky A and Bean J C 1984 IEEE Trans. Electron Devices 31 1135
155. Fama S, Colace L, Masini G and Assanto G 2002 Appl. Phys. Lett. 81 586
156. Temkin H, Pearsall T P, Bean J C, Logan R A and Luryi S 1986 Appl. Phys. Lett. 48 963
157. Splett A, Zinke T, Petermann K, Kasper E, Kibbel H, Herzog H-J and Presting H 1994 Photon. Technol. Lett. IEEE 6 59
158. Samavedam S B, Currie M T, Langdo T A and Fitzgerald E A 1998 Appl. Phys. Lett. 73 2125
159. Houghton D C 1991 J. Appl. Phys. 70 2136
160. Tang Y S, Ni W-X, Sotomayer Torres C M and Hansson G V 1995 Electron. Lett. 31 1385
161. Tsybeskov L and Lockwood D J 2000 Asian J. Phys. 9 745
162. Tsybeskov L, Hirschman K D, Duttagupta S P, Zacharias M, Fauchet P M, McCaffrey J P and Lockwood D J 1998 Appl. Phys. Lett. 72 43
163. Lockwood D J 2001 Silicon-Based Materials and Devices ed H S Nalwa (New York: Academic) p 225
164. Apetz R, Vescan L, Hartmann A, Dieker C and Lüth H 1995 Appl. Phys. Lett. 66 445
165. Brunhes T, Boucaud P, Sauvage S, Aniel F, Lourtioz J-M, Hernandez C, Campidelli Y, Kermarrec O, Bensahel D, Faini G and Sagnes I 2000 Appl. Phys. Lett. 77 1822
166. Stoffel M, Denker U and Schmidt O G 2003 Appl. Phys. Lett. 82 3236
167. Alguno A, Usami N, Ujihara T, Fujiwara K, Sazaki G, Nakajima K and Shiraki Y 2003 Appl. Phys. Lett. 83 1258
168. Vescan L, Chretien O, Stoica T, Mateeva E and Muck A 2000 Mater. Sci. Semicond. Process. 3 383
169. Naval L, Jalali B, Gomelsky L and Liu J M 1996 J. Lightwave Technol. 14 787
170. Jalali B, Naval L and Levi A F J 1994 J. Lightwave Technol. 12 1930
171. ElKurdy M, Boucaud P, Sauvage S, Kermarrec O, Campidelli Y, Bensahel D, Saint-Girons G and Sagnes I 2002 Appl. Phys. Lett. 80 509
172. ElKurdi M, Boucaud P, Sauvage S, Fishman G, O, Kermarrec Y C, Bensahel D, Saint-Girons G, Patriarche G and Sagnes I 2003 Physica E 16 523
173. Tong S, Liu J L, Wan J and Wang K L 2002 Appl. Phys. Lett. 80 1189
174. Konle J, Presting H, Kibbel H, Thonke K and Sauer R 2001 Solid-State Electron. 45 1921
175. Winnerl S, Buca D, Lenk S, Buchal C, Mantl S and Xu D-X 2002 Microelectron. Eng. 64 205
176. Xu D-X, Janz S, Lafontaine H and Pearson M R T 1999 Proc. SPIE Silicon-Based Optoelectronics ed D C Houghton and E A Fitzgerald (San Jose, CA: SPIE) p 50
177. El Kurdi M, Boucaud P, Sauvage S, Fishman G, Kermarrec O, Campidelli Y, Bensahel D, Saint-Girons G, Patriarche G and Sagnes I 2003 Physica E 16 523
178. Buca D, Winnerl S, Lenk S, Buchal C and Xu D-X 2002 Appl. Phys. Lett. 80 4172
179. Winnerl S, Buca D, Lenk S, Buchal C, Mantl S and Xu D-X 2002 Mater. Sci. Eng. B 89 73
180. Miesner C, Rothig O, Brunner K and Abstreiter G 2000 Appl. Phys. Lett. 76 1027
181. Miesner C, Brunner K and Abstreiter G 2001 Infrared Phys. Technol. 42 461
182. Sakamoto K, Matsuhata H, Tanner M O, Wang D and Wang K L 1998 Thin Solid Films 321 55
183. Liu F, Tersoff J and Lagally M G 1998 Phys. Rev. Lett. 80 1268
184. Zhu J-H, Brunner K and Abstreiter G 1998 Appl. Phys. Lett. 73 620
185. Xie Y H, Samavedam S B, Bulsara M, Langdo T A and Fitzgerald E A 1997 Appl. Phys. Lett. 71 3567
186. Teichert C, Hofer C, Lyutovich K, Bauer M and Kasper E 2000 Thin Solid Films 380 25
187. Leroy F, Eymery J, Gentile P and Fournel F 2002 Appl. Phys. Lett. 80 3078
188. Shiryaev S Y, Pedersen E V, Jensen F, Petersen J W, Hansen J L and Larsen A N 1997 Thin Solid Films 294 311
189. Voigtlander B and Theuerkauf N 2000 Surf. Sci. 461 L575
190. Wang K L, Tong S and Kim H J 2005 Mater. Sci. Semicond. Process. 8 389
191. Perovic D D, Weatherly G C, Simpson P J, Schultz P J, Jackman T E, Aers G C, Noël J P and Houghton D C 1991 Phys. Rev. B 43 14257-60
192. Jackman T E, Aers G C, McCaffrey J P, Britton D, Willtzki P, Schultz P J, Simpson P J and Mascher P 1992 Positron Annihilation: Proc. 9th Int. Conf. on Positron Annihilation (Zurich) ed Z Kajcsos and C Szeles p 301
193. Baribeau J-M, Wu X, Lockwood D J, Tay L and Sproule G I 2004 J. Vac. Sci. Technol. B 22 1479
194. Baribeau J-M, Rowell N L, Wu X, Beaulieu M and Lockwood D J 2004 Group-IV Semiconductor Nanostructures ed L Tsybeskov, D J Lockwood, C Delerue and M Ichikawa (Pittsburgh, PA: Materials Research Society)
195. Kamins T I and Williams R S 1997 Appl. Phys. Lett. 71 1201
196. Jin G, Liu J L, Thomas S G, Luo Y H, Wang K L and Nguyen B-Y 1999 Appl. Phys. Lett. 75 2752
197. Kamins T I, Ohlberg D A A, Williams R S, Zhang W and Chou S Y 1999 Appl. Phys. Lett. 74 1773
198. Kitajima T, Liu B and Leone S R 2002 Appl. Phys. Lett. 80 497
199. Zhong Z, Halilovic A, Muhlberger M, Schäffler F and Bauer G 2003 J. Appl. Phys. 93 6258
200. Zhong Z, Halilovic A, Muhlberger M, Schäffler F and Bauer G 2003 Appl. Phys. Lett. 82 445
201. Zhong Z, Halilovic A, Fromherz T, Schäffler F and Bauer G 2003 Appl. Phys. Lett. 82 4779
202. Zhong Z, Halilovic A, Lichtenberger H, Schäffler F and Bauer G 2004 Physica E 23 243
203. Kukta R V and Kouris D 2005 J. Appl. Phys. 97 033527
204. Schmidt O G, Lange C, Eberl K, Kienzle O and Ernst F 1997 Appl. Phys. Lett. 71 2340
205. Schmidt O G, Schieker S, Eberl K, Kienzle O and Ernst F 1998 Appl. Phys. Lett. 73 59
206. Schmidt O G, Lange C, Eberl K, Kienzle O and Ernst F 1998 Thin Solid Films 336 248
207. Dentel D, Vescan L, Chrétien O and Holländer B 2000 J. Appl. Phys. 88 5113
208. Wakayama Y, Sokolov L V, Zakharov N, Werner P and Gosele U 2003 Appl. Surf. Sci. 216 419
209. Baribeau J-M, Lockwood D J, Balle J, Rolfe S J and Sproule G I 2002 Mater. Sci. Eng. B 89 296
210. Baribeau J-M, Lockwood D J, Balle J, Rolfe S J, Sproule G I and Moisa S 2002 Thin Solid Films 410 61
211. Shao X et al 1999 J. Appl. Phys. 85 578
212. Dentel D, Bischoff J L, Kubler L, Stoffel M and Castelein G 2003 J. Appl. Phys. 93 5069
213. Leifeld O, Beyer A, Muller E, Grützmacher D and Kern K 2000 Thin Solid Films 380 176
214. Wakayama Y, Gerth G, Werner P, Gosele U and Sokolov L V 2000 Appl. Phys. Lett. 77 2328
215. Beyer A, Leifeld O, Muller E, Stutz S, Sigg H and Grützmacher D 2000 Thin Solid Films 380 246
216. Schmidt O G, Lange C, Eberl K, Kienzle O and Ernst F 1998 Thin Solid Films 321 70
217. Stoffel M, Simon L, Bischoff J L, Aubel D, Kubler L and Castelein G 2000 Thin Solid Films 380 32
218. Eberl K, Schmidt O G, Kienzle O and Ernst F 2000 Thin Solid Films 373 164
219. Sakai A and Tatsumi T 1994 Appl. Phys. Lett. 64 52
220. Baribeau J-M, Lockwood D J, Syme R W G and Labbé H J 1997 Control of Semiconductor Surfaces and Interfaces ed S M Prokes, O J Glembocki, S K Brierley, J M Gibson and J M Woodall (Pittsburgh, PA: Materials Research Society) p 113
221. Portavoce A, Ronda A and Berbezier I 2002 Mater. Sci. Eng. B 89 205
222. Portavoce A, Volpi F, Ronda A, Gas P and Berbezier I 2000 Thin Solid Films 380 164
223. Eaglesham D J, Unterwald F C and Jacobson D C 1993 Phys. Rev. Lett. 70 966
224. Kamins T I, Medeiros-Ribeiro G, Ohlberg D A A and Williams R S 2004 J. Appl. Phys. 95 1562
225. Shi W H, Li C B, Luo L P, Cheng B W and Wang Q M 2005 J. Cryst. Growth 279 329
226. Brunner K and Zrenner A 2004 Semiconductor Nanocrystals From Basic Principle to Applications ed A L Efros, D J Lockwood and L Tsybeskov (New York: Kluwer-Academic/Plenum) p 112
227. Wang K L, Liu J L and Jin G 2002 J. Cryst. Growth 237-239 1892
228. Yin H, Huang R, Hobart K D, Liang J, Suo Z, Shieh S R, Duffy T S, Kub F J and Sturm J C 2003 J. Appl. Phys. 94 6875
229. Yin H, Huang R, Hobart K D, Suo Z, Kuan T S, Inoki C K, Shieh S R, Duffy T S, Kub F J and Sturm J C 2002 J. Appl. Phys. 91 9716
230. Li C B, Cheng B W, Mao R W, Zuo Y H, Shi W H, Huang C J, Luo L P, Yu J Z and Wang Q M 2004 Thin Solid Films 467 197