Strain-induced ordering of small Ge islands in clusters at the surface of multilayered Si-Ge nanostructures

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Marchetti, R ^a,d   Montalenti, F ^a   Miglio, Leo ^a   Capellini, G ^b   De Seta, M ^b   Evangelisti, F ^b,c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b ROMA TRE UNIVERSITY   (Italy)

^c IFN CNR   (Italy)

^d SISSA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; MECHANICAL PROPERTIES; MOLECULAR DYNAMICS; MULTILAYERS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE PROPERTIES;

CAPPING LAYERS; CONFIGURATIONAL ARRANGEMENT; GE ISLANDS; TERSOFF POTENTIAL;

NANOSTRUCTURED MATERIALS;

EID: 29744455067     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2151250     Document Type: Article

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