Control of Ge dots in dimension and position by selective epitaxial growth and their optical properties

Applied Physics Letters

Volumn 72, Issue 13, 1998, Pages 1617-1619

  Kim, E S ^a   Usami, N ^a   Shiraki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; POSITION CONTROL; SEMICONDUCTING GERMANIUM; SUBSTRATES;

DIMENSION CONTROL; GERMANIUM DOTS; STRANSKI-KRASTANOV GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032023480     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121131     Document Type: Article

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