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Volumn 88, Issue 17, 2002, Pages 1761011-1761014
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Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation
a,b a a a a,b c c,c c |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
MATHEMATICAL MODELS;
MORPHOLOGY;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GERMANIUM COMPOUNDS;
SEMICONDUCTING SILICON;
SEMICONDUCTOR GROWTH;
STRAIN;
SUBSTRATES;
TENSILE PROPERTIES;
SURFACE STRAIN RELAXATION;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 0037193004
PISSN: 00319007
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (104)
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References (25)
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