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Volumn 88, Issue 17, 2002, Pages 1761011-1761014

Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; MATHEMATICAL MODELS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; STRAIN; SUBSTRATES; TENSILE PROPERTIES;

EID: 0037193004     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (104)

References (25)
  • 19
    • 84988792012 scopus 로고    scopus 로고
    • Ph.D. dissertation, University of Wisconsin-Madison
    • (1999)
    • Sullivan, J.S.1
  • 20
    • 84988746951 scopus 로고    scopus 로고
    • Ph.D. dissertation, University of Wisconsin-Madison
    • (2001)
    • Maxson, J.B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.