Electronic measurement and control of spin transport in silicon

Nature

Volumn 447, Issue 7142, 2007, Pages 295-298

  Appelbaum, Ian ^a   Huang, Biqin ^a   Monsma, Douwe J ^b  

^a UNIVERSITY OF DELAWARE   (United States)

^b Cambridge NanoTech Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FERROMAGNETIC MATERIAL; SILICON;

ELECTRICAL CONDUCTIVITY; ELECTRON; MAGNETIC PROPERTY; SILICON;

ANALYTICAL PARAMETERS; ARTICLE; DEVICE; ELECTRON TRANSPORT; ELECTRONICS; MEASUREMENT; PRIORITY JOURNAL; SEMICONDUCTOR; SENSITIVITY ANALYSIS; SURFACE PROPERTY; TRANSPORT KINETICS;

EID: 34249061541     PISSN: 00280836     EISSN: 14764687     Source Type: Journal    
DOI: 10.1038/nature05803     Document Type: Article

References (25)

1. Jedema, F. J., Heersche, H. B., Filip, A. T., Baselmans, J. J. A. & van Wees, B. J. Electrical detection of spin precession in a metallic mesoscopic spin valve. Nature 416, 713-717 (2002).
2. Valenzuela, S. O. & Tinkham, M. Direct electronic measurement of the spin Hall effect. Nature 442, 176-179 (2006).
3. Kikkawa, J. M. & Awschalom, D. D. Resonant spin amplification in n-type GaAs. Phys. Rev. Lett. 80, 4313-4316 (1998).
4. Kikkawa, J. M. & Awschalom, D. D. Lateral drag of spin coherence in gallium arsenide. Nature 397, 139-141 (1999).
5. Kato, Y., Myers, R. C., Gossard, A. C. & Awschalom, D. D. Coherent spin manipulation without magnetic fields in strained semiconductors. Nature 427, 50-53 (2003).
6. Stephens, J. et al. Spin accumulation in forward-biased MnAs/GaAs Schottky diodes. Phys. Rev. Lett. 93, 097602 (2004).
7. Crooker, S. A. et al. Imaging spin transport in lateral ferromagnet/ semiconductor structures. Science 309, 2191-2195 (2005).
8. Lou, X. et al. Electrical detection of spin accumulation at a ferromagnet-semiconductor interface. Phys. Rev. Lett. 96, 176603 (2006).
9. Lou, X. et al. Electrical detection of spin transport in lateral ferromagnet-semiconductor devices. Nature Phys. 3, 197-202 (2007).
10. Zutic, I., Fabian, J. & Erwin, S. C. Spin injection and detection in Si. Phys. Rev. Lett. 97, 026602 (2006).
11. Zutic, I., Fabian, J. & Das Sarma, S. Spintronics: Fundamentals and applications. Rev. Mod. Phys. 76, 323-410 (2004).
12. Tyryshkin, I. M., Lyon, S. A., Astashkin, A. V. & Raitsimring, A. M. Electron spin relaxation times of phosphorus donors in Si. Phys. Rev. B 68, 193207 (2003).
13. Schmidt, G., Ferrand, D., Molenkamp, L. W., Filip, A. T. & van Wees, B. J. Fundamental obstacle for electrical spin injection from a ferromagnetic metal into a diffusive semiconductor. Phys. Rev. B 62, R4790-R4793 (2000).
14. Monzon, F. G., Tang, H. X. & Roukes, M. L. Magnetoelectronic phenomena at a ferromagnet-semiconductor interface. Phys. Rev. Lett. 84, 5022-5022 (2000).
15. Monsma, D. J., Lodder, J. C., Popma, ThJA & Dieny, B. Perpendicular hot electron spin-valve effect in a new magnetic field sensor: The spin valve transistor. Phys. Rev. Lett. 74, 5260-5263 (1995).
16. Monsma, D. J., Vlutters, R. & Lodder, J. C. Room temperature- operating spin-valve transistors formed by vacuum bonding. Science 281, 407-409 (1998).
17. Jiang, X. et al. Optical detection of hot-electron spin injection into GaAs from a magnetic tunnel transistor source. Phys. Rev. Lett. 90, 256603 (2003).
18. Zega, T. J. et al. Determination of interface atomic structure and its impact on spin transport using Z-contrast microscopy and density-functional theory. Phys. Rev. Lett. 96, 196101 (2006).
19. Johnson, M. & Silsbee, R. H. Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals. Phys. Rev. Lett. 55, 1790-1793 (1985).
20. Portis, A. M., Kip, A. F., Kittel, C. & Brattain, W. H. Electron spin resonance in a silicon semiconductor. Phys. Rev. 90, 988-989 (1953).
21. Jacoboni, C., Canali, C., Ottaviani, G. & Quaranta, A. A. A review of some charge transport properties of Si. Solid State Electron. 20, 77-89 (1977).
22. Tyryshkin, A. M., Lyon, S. A., Jantsch, W. & Schäffler, F. Spin manipulation of free two-dimensional electrons in Si/SiGe quantum wells. Phys. Rev. Lett. 94, 126802 (2005).
23. Jiang, X. et al. Highly spin polarized room temperature tunnel injector for semiconductor spintronics using MgO (100). Phys. Rev. Lett. 94, 056601 (2005).
24. Smith, D. L. & Silver, R. N. Electrical spin injection into semiconductors. Phys. Rev. B 64, 045323 (2002).
25. Hanbicki, A. T., Jonker, B. T., Itskos, G., Kioseoglou, G. & Petrou, A. Efficient electrical spin injection from a magnetic metal/tunnel barrier contact into a semiconductor. Appl. Phys. Lett. 80, 1240-1242 (2002).