Intermixing-promoted scaling of Ge/Si(100) island sizes

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 614-619

  De Seta, M ^a   Capellini, G ^a   Evangelisti, F ^a   Spinella, C ^b  

^a ROMA TRE UNIVERSITY   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL SIZE; CRYSTALLOGRAPHIC STRUCTURE; DEPOSITION TEMPERATURES; EFFECTIVE STRAIN; ISLAND GROWTH; ISLAND NUCLEATION; ISLAND SIZE; LATTICE DEFORMATION; MEAN SIZE; SHAPE EVOLUTION; SI DISTRIBUTION; SI/GE; SILICON SUBSTRATES; THEORETICAL CALCULATIONS;

CHEMICAL VAPOR DEPOSITION; NUCLEATION; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 0036639605     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1483370     Document Type: Article

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