Strain induced semiconductor nanotubes: From formation process to device applications

Journal of Physics D: Applied Physics

Volumn 41, Issue 19, 2008, Pages

  Li, Xiuling ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; NANOPORES; NANOSTRUCTURES; NANOTUBES; OPTICAL PROPERTIES; SEMICONDUCTOR MATERIALS; THREE DIMENSIONAL;

BOTTOM-UP; BUILDING BLOCKS; DEVICE APPLICATIONS; EPITAXIALLY GROWN; FORMATION PROCESSES; HETERO JUNCTION; NANOELECTRONIC; NANOPHOTONIC DEVICES; NEW CLASS; OPTICAL-; ROLLING MECHANISM; SEMICONDUCTOR NANOTUBES; SPATIAL POSITIONING; THREE-DIMENSIONAL (3D); TOP-DOWN;

CRYSTAL ORIENTATION;

EID: 53349101683     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/19/193001     Document Type: Review

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