Universal shapes of self-organized semiconductor quantum dots: Striking similarities between InAs/GaAs(001) and Ge/Si(001)

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5673-5675

  Costantini, G ^a   Rastelli, A ^a   Manzano, C ^a   Songmuang, R ^a   Schmidt, O G ^a   Kern, K ^a   Von Kanel H ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ELASTICITY; MAGNETRON SPUTTERING; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; NANOSTRUCTURED MATERIALS; PASSIVATION; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE TOPOGRAPHY;

BIMODAL SIZE-DISTRIBUTIONS; CAPPING-PASSIVATION PROCESS; MAGNETRON SPUTTERING EPITAXY; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 12844284695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829164     Document Type: Article

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