SCOPUS 정보 검색 플랫폼

Applied Surface Science

Volumn 301, Issue , 2014, Pages 9-18

Recent advances on dielectrics technology for SiC and GaN power devices

(8) Roccaforte, F a Fiorenza, P a Greco, G a Vivona, M a Lo Nigro, R a Giannazzo, F a Patti, A b Saggio, M b

a CNR (Italy)

b STMICROELECTRONICS (Italy)

Author keywords

4H SiC MOSFET; AlGaN GaN HEMT; Dielectrics; Power devices

Indexed keywords

ALUMINUM GALLIUM NITRIDE; DIELECTRIC MATERIALS; ELECTRIC POWER DISTRIBUTION; ENERGY CONVERSION; GALLIUM NITRIDE; GATE DIELECTRICS; HIGH ELECTRON MOBILITY TRANSISTORS; III-V SEMICONDUCTORS; MOSFET DEVICES; PASSIVATION; SILICA; SILICON CARBIDE; SILICON OXIDES;

4H-SIC MOSFET; ALGAN/GAN HEMTS; APPLICATION FIELDS; GALLIUM NITRIDE (GAN); PASSIVATION PROCESS; POWER DEVICES; RENEWABLE ENERGIES; SILICON CARBIDES (SIC);

POWER HEMT;

EID: 84897917281 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2014.01.063 Document Type: Conference Paper

Times cited : (156)

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