High-temperature performance of AlGaN/GaN MOSHEMT with SiO 2 gate insulator fabricated on Si (111) substrate

IEEE Transactions on Electron Devices

Volumn 59, Issue 9, 2012, Pages 2424-2429

  Husna, Fatima ^a,b   Lachab, Mohamed ^a,b   Sultana, Mahbuba ^b   Adivarahan, Vinod ^a   Fareed, Qhalid ^a,b   Khan, Asif ^b  

^a Nitek Inc   (United States)

^b The Department of Mechanical Engineering   (United States)

Author keywords

AlGaN GaN; high electron mobility transistor (HEMT); high temperature operation; metal organic chemical vapor deposition; metal oxide semiconductor HEMT (MOSHEMT); Si substrate

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; DC OPERATION; ELEVATED TEMPERATURE; GATE BIAS; GATE INSULATOR; GATE-LEAKAGE CURRENT; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH QUALITY; HIGH TEMPERATURE PERFORMANCE; MAXIMUM DRAIN CURRENT; MAXIMUM OUTPUT; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON-MOBILITY TRANSISTORS; MOSHEMT; SI SUBSTRATES; SI(111) SUBSTRATE; TEMPERATURE RANGE; THERMAL BEHAVIORS;

DEGRADATION; DIELECTRIC DEVICES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SILICON CARBIDE; SILICON WAFERS; SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84865528691     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2204888     Document Type: Article

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