Critical issues for MOS based power devices in 4H-SiC

Materials Science Forum

Volumn 615 617, Issue , 2009, Pages 743-748

  Ryu, Sei Hyung ^a   Dhar, Sarit ^a   Haney, Sarah ^a   Agarwal, Anant ^a   Lelis, Aivars ^b   Geil, Bruce ^b   Scozzie, Charles ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Field effect mobility; MOS channel; Power DMOSFET; Threshold voltage

Indexed keywords

GATE DIELECTRICS; MOS DEVICES; SILICON CARBIDE; THRESHOLD VOLTAGE;

DOPING CONCENTRATION; FIELD-EFFECT MOBILITIES; GATE DIELECTRIC LAYERS; OPERATING TEMPERATURE RANGES; ORDERS OF MAGNITUDE; POWER DMOSFET; PROCESSING TECHNIQUE; THERMAL OXIDE LAYER;

POWER SEMICONDUCTOR DEVICES;

EID: 67649473706     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.615-617.743     Document Type: Conference Paper

References (6)

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