First demonstration of high-power GaN-on-silicon transistors at 40 GHz

IEEE Electron Device Letters

Volumn 33, Issue 8, 2012, Pages 1168-1170

  Medjdoub, F ^a   Zegaoui, M ^a   Grimbert, B ^a   Ducatteau, D ^a   Rolland, N ^a   Rolland, P A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

AlN GaN high electron mobility transistors (HEMTs); grown on silicon substrate (GaN on Si); high output power density; Ka band

Indexed keywords

ALN; ALN/GAN; DOUBLE HETEROSTRUCTURES; FULLY COMPATIBLE; HIGH CURRENT DENSITIES; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); HIGH FREQUENCY PERFORMANCE; HIGH OUTPUT POWER; HIGH-POWER; HIGH-POWER MILLIMETER-WAVE AMPLIFIER; KA BAND; LOW-LEAKAGE CURRENT; SCALED DEVICES; SI-BASED DEVICES; SILICON SUBSTRATES; TRAPPING EFFECTS; ULTRA-THIN BARRIERS;

GALLIUM NITRIDE; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84864423896     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2198192     Document Type: Article

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