Atomic layer deposition of SiO 2 for AlGaN/GaN MOS-HFETs

IEEE Electron Device Letters

Volumn 33, Issue 9, 2012, Pages 1240-1242

  Kirkpatrick, Casey J ^a   Lee, Bongmook ^a   Suri, Rahul ^a   Yang, Xiangyu ^a   Misra, Veena ^a  

^a North Carolina State University   (United States)

Author keywords

Atomic layer deposition (ALD); GaN; heterostructure field effect transistor (HFET); metal oxide semiconductor heterojunction field effect transistor (MOS HFET); SiO 2

Indexed keywords

ALGAN/GAN; FIXED CHARGES; GAN; GATE-LEAKAGE CURRENT; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; INTERFACIAL LAYER; METAL OXIDE SEMICONDUCTOR; MOS-HFETS; SCHOTTKY GATE; SIO 2; THREE ORDERS OF MAGNITUDE;

DIELECTRIC DEVICES; ELECTRIC CHARGE; ELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; GATE DIELECTRICS; HETEROJUNCTIONS;

ATOMIC LAYER DEPOSITION;

EID: 84865418297     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2203782     Document Type: Article

References (20)

1. 3 of different thickness," Solid State Electron., vol. 52, no. 6, pp. 973-979, Jun. 2008.
2. X. Hu, A. Koudymov, G. Simin, J. Yang, and M. A. Khan, " Si3N4/AlGaN/GaN-metal-insulator-semiconductor heterostructure field-effect transistors," Appl. Phys. Lett., vol. 79, no. 17, p. 2832, Oct. 2001.
3. 3 as gate insulator," Appl. Phys. Lett., vol. 95, no. 22, pp. 223501-1-223501-3, Nov. 2009.
4. 3 of different thickness," Solid State Electron., vol. 52, no. 6, pp. 973-979, Jun. 2008.
5. M. Marso, G. Heidelberger, K. M. Indlekofer, J. Bernat, A. Fox, P. Kordos, and H. Luth, "Origin of improved RF performance of AlGaN/GaN MOSHFETs compared to HFETs," IEEE Trans. Electron Devices, vol. 53, no. 7, pp. 1517-1523, Jul. 2006. (Pubitemid 43997211)
6. Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, "III-nitride metal-insulator-semiconductor heterojunction field-effect transistors using sputtered AlON thin films," Appl. Phys. Lett., vol. 86, no. 3, pp. 032109-1-032109-3, Jan. 2005.
7. C. T. Lee, H. W. Chen, and H. Y. Lee, "Metal-oxide-semiconductor devices using Ga2O3 dielectrics on n-type GaN," Appl. Phys. Lett., vol. 82, no. 24, pp. 4304-4306, Jun. 2003.
8. 2/AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors," Appl. Phys. Lett., vol. 88, no. 17, pp. 173504-1-173504-3, Apr. 2006.
9. R. Mehandru, B. Luo, J. Kim, F. Ren, B. P. Gila, A. H. Onstine, C. R. Abernathy, S. J. Pearton, D. Gotthold, R. Birkhahn, B. Peres, R. Fitch, R. J. Gillespie, T. Jenkins, J. Sewell, D. Via, and A. Crespo, "AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation," Appl. Phys. Lett., vol. 82, no. 15, pp. 2530-2532, Apr. 2003.
10. S. Rai, V. Adivarahan, N. Tipirneni, A. Koudymov, J. Yang, G. Simin, and M. A. Khan, "Low threshold-14 W/mm ZrO2/AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors," Jpn. J. Appl. Phys., vol. 45, no. 6A, p. 4985, Jun. 2006.
11. 3 and Si/MgO co-sputtered films," Thin Solid Films, vol. 325, no. 1/2, pp. 130-136, Jul. 1998. (Pubitemid 128426393)
12. X. C. Wu, W. H. Song, K. Y. Wang, T. Hu, B. Zhao, Y. P. Sun, and J. J. Du, "Preparation and photoluminescence properties of amorphous silica nanowires," Chem. Phys. Lett., vol. 336, no. 1/2, pp. 53-56, Mar. 2001. (Pubitemid 33631193)
13. J. K. Kim, J. L. Lee, J. W. Lee, Y. J. Park, and T. Kim, "Effect of surface treatment by (NH4)2Sx solution on the reduction of ohmic contact resistivity of p-type GaN," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 17, no. 2, pp. 497-499, Mar. 1999. (Pubitemid 129721207)
14. T. Hashizume, S. Ootomo, T. Inagaki, and H. Hasegawa, "Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 21, no. 4, pp. 1828-1838, Jul. 2003.
15. D. S. Li,M. Sumiya, S. Fuke, D. Yang, D. Que, Y. Suzuki, and Y. Fukuda, "Selective etching of GaN polar surface in potassium hydroxide solution studied by X-ray photoelectron spectroscopy," J. Appl. Phys., vol. 90, no. 8, pp. 4219-4224, Oct. 2001.
16. 2 thermally grown on Si (100) and Si (111) surfaces," Appl. Surf. Sci., vol. 113/114, pp. 585-589, Apr. 1997. (Pubitemid 127388850)
17. G. Spierings, "Wet chemical etching of silicate glasses in hydrofluoric acid based solutions," J. Mater. Sci., vol. 28, no. 23, pp. 6261-6273, Dec. 1993.
18. W. Huang, T. Khan, and T. P. Chow, "Comparison of MOS capacitors on N an P type GaN," J. Electron. Mater., vol. 35, no. 4, pp. 726-732, Apr. 2006. (Pubitemid 43745621)
19. H. Kim, R. Thompson, V. Tilak, T. Prunty, J. Shealy, and L. Eastman, "Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation," IEEE Electron Device Lett., vol. 24, no. 7, pp. 421-423, Jul. 2003.
20. 2 tunnel dielectrics," in IEDM Tech. Dig., 2010, pp. 484-487.